# Fully vertical AlN-on-SiC Schottky barrier diodes

https://mdr.nims.go.jp/datasets/4a1984aa-0624-4cb2-bc36-b9e44ac34764

## File

- [AlN_JJAP_240807-revised.docx](https://mdr.nims.go.jp/filesets/f559564b-f087-4560-afb8-b474fa1d9556/download) ([Detail](https://mdr.nims.go.jp/filesets/f559564b-f087-4560-afb8-b474fa1d9556.md))

## Id

4a1984aa-0624-4cb2-bc36-b9e44ac34764

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-11-25T03:02:37.352775Z

## Updated at

2025-10-21T06:50:30.156701Z

## Published at

2025-10-21T06:43:31.044973Z

## Doi

https://doi.org/10.48505/nims.5027

## First published url

https://doi.org/10.35848/1347-4065/ad7dc3

## Date published

2024-10-01

## Recorded date published

2024-10-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Fully vertical AlN-on-SiC Schottky barrier diodes
  title_type: original
  lang: en

## Description

- description: 'We report the demonstration of fully vertical AlN Schottky barrier
    diodes using n-type SiC substrates. We show that Schottky-barrier diodes (SBDs)
    and metal-semiconductor field-effect transistors with Si-implanted AlN channels
    can operate at 1100 K and 1000 K, respectively. The breakdown voltage and barrier
    height of the AlN SBD were 610 V and 3.5 eV, respectively. We found that the high
    barrier height and thermal stability of the Ni contact on AlN greatly contributed
    to high-temperature operation of the devices. '
  description_type: abstract
  lang: und

## Creator

- name: Hironori Okumura
  role: author
  orcid: https://orcid.org/0000-0002-5464-9169
- name: Masataka Imura
  role: author
  orcid: https://orcid.org/0000-0002-4236-9549
- name: Fuga Miyazawa
  role: author
- name: Lorenzo Mainini
  role: author

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: AlN
  schema: not_defined
- subject: 4H-SiC
  schema: not_defined
- subject: Schottky barrier diodes
  schema: not_defined

## Rights

- description: This is the Accepted Manuscript version of an article accepted for
    publication in Japanese Journal of Applied Physics.  IOP Publishing Ltd is not
    responsible for any errors or omissions in this version of the manuscript or any
    version derived from it.  The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad7dc3.
  identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-10-15
end_date: 2025-10-15

## Journal

- title: Japanese Journal of Applied Physics
  issn: '00214922'
  volume: '63'
  issue: '10'
  article_number: '100903'

## Conference



## Related item



## Funding

- identifier: 23K21082
  funder_name: JSPS
- identifier: 23K26556
  funder_name: JSPS

## Instrument



## Instrument operator



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: f559564b-f087-4560-afb8-b474fa1d9556
  filename: AlN_JJAP_240807-revised.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 25224460
  md5: f50d6cce503751f5c5bcb26cce10495e

## Thumbnail

fileset_id: f559564b-f087-4560-afb8-b474fa1d9556
filename: AlN_JJAP_240807-revised.docx