# All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping?

https://mdr.nims.go.jp/datasets/4a013ffc-9cdc-4941-8597-268e9978c635

## File

- [Adv Materials Inter - 2022 - Renn - All About the Interface  Do Residual Contaminants at A High‐Quality h‐BN Monolayer.pdf](https://mdr.nims.go.jp/filesets/2da29e1b-fb4d-404f-8863-953f2865996f/download) ([Detail](https://mdr.nims.go.jp/filesets/2da29e1b-fb4d-404f-8863-953f2865996f.md))

## Id

4a013ffc-9cdc-4941-8597-268e9978c635

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-25T04:11:03.901191Z

## Updated at

2025-02-25T23:30:49.908993Z

## Published at

2025-02-25T23:30:50.047613Z

## Doi



## First published url

https://doi.org/10.1002/admi.202101701

## Date published

2022-01-29

## Recorded date published

2022-4

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: 'All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN
    Monolayer Perylene Diimide Interface Cause Charge Trapping?'
  title_type: original
  lang: en

## Description

- description: 'Intrinsic charge transport in molecularly thin organic semiconducting
    crystals is critically sensitive to the quality of the interfaces required to
    perform the electrical measurements. Most prominent are the dielectric-semiconductor
    and semiconductor-metal interface. While impacts from the latter on charge transport
    can be extracted by four-terminal measurements, the impact of the dielectric interface
    can only be minimized, typically by utilizing inert dielectrics. Here we show,
    that the charge transport in organic field-effect transistors based on the n-type
    small molecule PDI1MPCN2 can be improved up to one order of magnitude by using
    hexagonal boron nitride (h-BN) as dielectric, compared to a standard SiO2 substrate.
    Using temperature-dependent two- and four-point measurements, we systematically
    analyze the charge-transport properties of our devices, where we obtain high 4-terminal
    mobilities of up to 5.0  〖cm〗^2⁄Vs. The high mobility likely stems from decreased
    charge-carrier trapping at the semiconductor-dielectric interface due to the smooth
    and continuous surface of the inert h-BN. Nevertheless, the temperature dependencies
    of the mobility, threshold voltage and interface-state trap density suggest, that
    charge-carrier trapping at the dielectric-semiconductor interface still exists.
    By comparing our data to transport studies performed on thin air-gapped organic
    films, we conclude that an interfacial layer (most likely water or solvent residues)
    between h-BN and the monolayer PDI1MPCN2 causes charge trapping. '
  description_type: abstract
  lang: und

## Creator

- name: Lukas Renn
  role: author
- name: Lisa S. Walter
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: R. Thomas Weitz
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Charge transport
  schema: not_defined
- subject: organic semiconducting crystals
  schema: not_defined
- subject: hexagonal boron nitride
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Materials Interfaces
  issn: '21967350'
  volume: '9'
  issue: '10'
  article_number: '2101701'

## Conference



## Related item



## Funding

- funder_name: Solar Technologies go Hybrid
- funder_name: Deutsche Forschungsgemeinschaft
- identifier: 19H05790
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMXP0112101001
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JP20H00354
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 2da29e1b-fb4d-404f-8863-953f2865996f
  filename: Adv Materials Inter - 2022 - Renn - All About the Interface  Do Residual
    Contaminants at A High‐Quality h‐BN Monolayer.pdf
  content_type: application/pdf
  size: 1328302
  md5: 454371416268b9f00376ac7cd7128672

## Thumbnail

fileset_id: 2da29e1b-fb4d-404f-8863-953f2865996f
filename: Adv Materials Inter - 2022 - Renn - All About the Interface  Do Residual
  Contaminants at A High‐Quality h‐BN Monolayer.pdf