Conductance fluctuations in high mobility monolayer graphene: Nonergodicity, lack of determinism and chaotic behavior

C. R. da Cunha; M. Mineharu; M. Matsunaga; N. Matsumoto; C. Chuang; Y. Ochiai; G.-H. Kim; K. Watanabe; T. Taniguchi; D. K. Ferry; N. Aoki

doi:10.1038/srep33118

論文 Conductance fluctuations in high mobility monolayer graphene: Nonergodicity, lack of determinism and chaotic behavior

C. R. da Cunha ; M. Mineharu ; M. Matsunaga ; N. Matsumoto ; C. Chuang ; Y. Ochiai ; G.-H. Kim ; K. Watanabe (National Institute for Materials Science) ; T. Taniguchi (National Institute for Materials Science) ; D. K. Ferry ; N. Aoki

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C. R. da Cunha, M. Mineharu, M. Matsunaga, N. Matsumoto, C. Chuang, Y. Ochiai, G.-H. Kim, K. Watanabe, T. Taniguchi, D. K. Ferry, N. Aoki. Conductance fluctuations in high mobility monolayer graphene: Nonergodicity, lack of determinism and chaotic behavior. Scientific Reports. 2016, 6 (1), 24940. https://doi.org/10.1038/srep33118

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(abstract)

We have fabricated a high mobility device composed of a monolayer graphene flake sandwiched between two sheets of boron nitride. Conductance oscillations as functions of a back gate voltage and magnetic field were obtained to check for ergodicity. Non-linear dynamics analysis were used to study the behavior of n-type and p-type carriers. We have found that the carrier motion is chaotic and dissipative at low temperatures, which might be the reason for the observed non-ergodicity. The distribution of eigenvalues was estimated from the conductance oscillations with Gaussian kernels that reveal a Gaussian Unitary Ensemble for p-type carriers, possibly indicating a violation in time-reversal symmetry.

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