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説明:

We study the magnetic and electrical transport properties of magnetic tunnel junctions (MTJs) consisting of a Co3Mn/Mo/CoFeB multilayer prepared using a mass-production-compatible magnetron sputtering system. The Co3Mn/Mo/CoFeB multilayer sandwiched between two MgO layers exhibits remarkable perpendicular magnetic anisotropy, and a uniaxial magnetic anisotropy constant as large as 0.2 MJ/m3 is achieved by optimizing the Co3Mn layer thickness as well as the annealing temperature. The current-in-plane tunneling measurement reveals a large tunneling magnetoresistance of over 100% in perpendicularly magnetized MTJs. These experimental results indicate the applicability of Co3Mn alloy for magnetic random access memory devices.

権利情報:

• In Copyright
  

キーワード: magnetic tunnel junctions, scanning transmission electron microscopy, energy dispersive X-ray spectrometry, nanobeam electron diffraction

刊行年月日: 2023-02-07

出版者: American Physical Society (APS)

掲載誌:

• Physical Review Applied (ISSN: 23317019) vol. 19 issue. 2 024020

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4235

公開URL: https://doi.org/10.1103/PhysRevApplied.19.024020

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更新時刻: 2024-01-05 22:12:01 +0900

MDRでの公開時刻: 2023-12-26 13:10:42 +0900