Tatsuya Yamamoto
;
Tomohiro Ichinose
;
Jun Uzuhashi
(National Institute for Materials Science
)
;
Takayuki Nozaki
;
Tadakatsu Ohkubo
(National Institute for Materials Science)
;
Kay Yakushiji
;
Shingo Tamaru
;
Shinji Yuasa
Collection
Citation
Description:
(abstract)We study the magnetic and electrical transport properties of magnetic tunnel junctions (MTJs) consisting of a Co3Mn/Mo/CoFeB multilayer prepared using a mass-production-compatible magnetron sputtering system. The Co3Mn/Mo/CoFeB multilayer sandwiched between two MgO layers exhibits remarkable perpendicular magnetic anisotropy, and a uniaxial magnetic anisotropy constant as large as 0.2 MJ/m3 is achieved by optimizing the Co3Mn layer thickness as well as the annealing temperature. The current-in-plane tunneling measurement reveals a large tunneling magnetoresistance of over 100% in perpendicularly magnetized MTJs. These experimental results indicate the applicability of Co3Mn alloy for magnetic random access memory devices.
Rights:
Keyword: magnetic tunnel junctions, scanning transmission electron microscopy, energy dispersive X-ray spectrometry, nanobeam electron diffraction
Date published: 2023-02-07
Publisher: American Physical Society (APS)
Journal:
- Physical Review Applied (ISSN: 23317019) vol. 19 issue. 2 024020
Funding:
Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4235
First published URL: https://doi.org/10.1103/PhysRevApplied.19.024020
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Updated at: 2024-01-05 22:12:01 +0900
Published on MDR: 2023-12-26 13:10:42 +0900
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Large tunneling magnetoresistance in perpendicularly magnetized magnetic tunnel junctions using Co75Mn25MoCo20Fe60B20 multilayers.pdf
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