# Halide vapor phase epitaxy of a thick                    <i>c</i>                    -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template

https://mdr.nims.go.jp/datasets/488e7e22-e71e-4213-8a37-842621ba3bd8

## File

- [J_Appl_Phys_139_075302_(2026).pdf](https://mdr.nims.go.jp/filesets/5fdc39cd-c402-413e-8817-2b81dcad110d/download) ([Detail](https://mdr.nims.go.jp/filesets/5fdc39cd-c402-413e-8817-2b81dcad110d.md))

## Id

488e7e22-e71e-4213-8a37-842621ba3bd8

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-17T23:39:20.410536Z

## Updated at

2026-02-18T07:30:15.246642Z

## Published at

2026-02-18T03:58:34.340754Z

## Doi



## First published url

https://doi.org/10.1063/5.0319104

## Date published

2026-02-21

## Recorded date published

2026-2-21

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: |-
    Halide vapor phase epitaxy of a thick
                        <i>c</i>
                        -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
  title_type: original
  lang: en

## Description

- description: In this study, c-plane α-Ga2O3 films were grown by halide vapor phase
    epitaxy (HVPE) on high-quality α-Cr2O3/sapphire templates, and the dependence
    of crystalline quality on the film thickness was systematically investigated.
    HVPE growth was carried out under atmospheric pressure at 520 °C using GaCl and
    O2 as the precursors, with a growth rate of 14 µmh-1. The film thickness was varied
    from 0.24 to 21 µm by controlling the growth time. X-ray 2θ–ω scan and pole figure
    measurements confirmed that the α-Ga2O3 epitaxial layers were phase-pure single-crystalline
    films. Thickness-dependent X-ray rocking curve measurements and reciprocal space
    mapping revealed that lattice relaxation began at a thickness of approximately
    0.47 µm or less and virtually completed for thicknesses of 11 µm or greater. Cross-sectional
    scanning transmission electron microscopy showed that dislocations were predominantly
    observed near the film surface and were absent at the α-Ga2O3/α-Cr2O3 interface.
    Etch pit density measurements yielded a low dislocation density of 5.6 × 107 cm-2
    for the fully strained 0.24 µm-thick film. For the almost fully relaxed 21 µm-thick
    film a higher density of 3.9 × 108 cm-2 was observed. However, the value was approximately
    one order magnitude lower than that for an α-Ga2O3 film directly grown on a c-plane
    sapphire substrate under identical conditions.
  description_type: abstract
  lang: und

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
- name: Shiyu Xiao
  role: author
  orcid: https://orcid.org/0009-0007-0382-0396
- name: Kazuto Murakami
  role: author
- name: Katsuhiro Imai
  role: author
- name: Takahiro Tomita
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: HVPE
  schema: not_defined
- subject: Cr2O3
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Journal of Applied Physics
  issn: '00218979'
  volume: '139'
  issue: '7'
  article_number: '075302'

## Conference



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## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Fileset

- id: 5fdc39cd-c402-413e-8817-2b81dcad110d
  filename: J_Appl_Phys_139_075302_(2026).pdf
  content_type: application/pdf
  size: 3433791
  md5: '0957ee947375b279c68f9ea11dcf3ef5'

## Thumbnail

fileset_id: 5fdc39cd-c402-413e-8817-2b81dcad110d
filename: J_Appl_Phys_139_075302_(2026).pdf