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説明:

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: ultraviolet photodetector, semiconductor, thin film, one-dimensional nanostructures

刊行年月日: 2013-08-13

出版者: MDPI AG

掲載誌:

• Sensors (ISSN: 14248220) p. 10482-10518

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.3390/s130810482

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更新時刻: 2024-01-05 22:12:01 +0900

MDRでの公開時刻: 2023-04-28 10:22:41 +0900