# Synergistic Effect of Surface States and Deep Defects for Ultrahigh Gain Deep‐Ultraviolet Photodetector with Low‐Voltage Operation

https://mdr.nims.go.jp/datasets/47f19d0c-6b1a-43f6-8740-c262d1883881

## File

- [2024.0928 revised manuscript　LiaoR1.pdf](https://mdr.nims.go.jp/filesets/9bea67b8-c0df-4173-bee2-af716c94c3e4/download) ([Detail](https://mdr.nims.go.jp/filesets/9bea67b8-c0df-4173-bee2-af716c94c3e4.md))

## Id

47f19d0c-6b1a-43f6-8740-c262d1883881

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-04-21T04:10:07.758293Z

## Updated at

2025-12-03T23:30:33.356957Z

## Published at

2025-12-03T23:22:26.503484Z

## Doi

https://doi.org/10.48505/nims.5443

## First published url

https://doi.org/10.1002/adfm.202420238

## Date published

2024-12-04

## Recorded date published

2025-4

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Synergistic Effect of Surface States and Deep Defects for Ultrahigh Gain
    Deep‐Ultraviolet Photodetector with Low‐Voltage Operation
  title_type: original
  lang: en

## Description

- description: To achieve ultra-high gain deep-ultraviolet (DUV) detectors based on
    ultra-wide bandgap semiconductors comparable with those of bulky photomultiplier
    tubes (PMTs), avalanche photodiodes have usually been adopted. However, the high-operation
    voltage (∼100 V) is not compatible with monolithic integration. Herein, it is
    demonstrated that the ultra-high gain DUV photodetectors (PDs) with low operation
    voltages (<5 V) can be achieved by using the synergistic effect of surface states
    and deep defects in a type-Ib single-crystal diamond (SCD) substrate. The overall
    photoresponse, such as the sensitivity, dark current, spectral selectivity, and
    response speed,  of the diamond DUV-PDs can be simply tailored by the surface
    hydrogen or oxygen termination of the SCD substrate. The DUV responsivity and
    external quantum efficiency are more than 2.5 × 104A/W and 1.4 × 107%, respectively,
    at 220 nm-wavelength light, comparable with those of PMTs. The DUV/visible light
    rejection ratio (R220 nm/R400 nm) is as high as 6.7 × 105. The depletion of the
    2D hole gas by deep nitrogen defect provides a low dark current and the filling
    of the ionized nitrogen upon DUV illumination induces a huge photocurrent. The
    synergistic effect of the surface states and the bulk deep defects opens the avenue
    for the development of DUV detectors compatible with integrated circuits.
  description_type: abstract
  lang: und

## Creator

- name: Keyun Gu
  role: author
- name: Kongping Wu
  role: author
- name: Zilong Zhang
  role: author
- name: Takeo Ohsawa
  role: author
  orcid: https://orcid.org/0000-0001-7528-8940
- name: Jian Huang
  role: author
- name: Yasuo Koide
  role: author
- name: Masaya Toda
  role: author
- name: Meiyong Liao
  role: author
  orcid: https://orcid.org/0000-0003-1361-4266

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Diamond
  schema: not_defined
- subject: photodetector
  schema: not_defined

## Rights

- description: 'This is the peer reviewed version of the following article: K. Gu,
    K. Wu, Z. Zhang, T. Ohsawa, J. Huang, Y. Koide, M. Toda, M. Liao, Synergistic
    Effect of Surface States and Deep Defects for Ultrahigh Gain Deep-Ultraviolet
    Photodetector with Low-Voltage Operation. Adv. Funct. Mater. 2025, 35, 2420238,
    which has been published in final form at https://doi.org/10.1002/adfm.202420238.
    This article may be used for non-commercial purposes in accordance with Wiley
    Terms and Conditions for Use of Self-Archived Versions. This article may not be
    enhanced, enriched or otherwise transformed into a derivative work, without express
    permission from Wiley or by statutory rights under applicable legislation. Copyright
    notices must not be removed, obscured or modified. The article must be linked
    to Wiley’s version of record on Wiley Online Library and any embedding, framing
    or otherwise making available the article or pages thereof by third parties from
    platforms, services and websites other than Wiley Online Library must be prohibited.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-12-04
end_date: 2025-12-04

## Journal

- title: Advanced Functional Materials
  issn: 1616301X
  volume: '35'
  issue: '14'

## Conference



## Related item



## Funding

- identifier: 22K18957
  funder_name: Japan Society for the Promotion of Science
- identifier: 24H00287
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 9bea67b8-c0df-4173-bee2-af716c94c3e4
  filename: 2024.0928 revised manuscript　LiaoR1.pdf
  content_type: application/pdf
  size: 1875602
  md5: 1c0ea7254340fafc3f28c0032f8bffe5

## Thumbnail

fileset_id: 9bea67b8-c0df-4173-bee2-af716c94c3e4
filename: 2024.0928 revised manuscript　LiaoR1.pdf