# Demonstration of β-Ga                    <sub>2</sub>                    O                    <sub>3</sub>                    MEMS resonators fabricated by crystallographic gas etching of (001) β-Ga                    <sub>2</sub>                    O                    <sub>3</sub>                    substrates

https://mdr.nims.go.jp/datasets/47c56837-8ac5-40f2-b88c-9be3043e8f12

## File

- [apex_19_11_116501.pdf](https://mdr.nims.go.jp/filesets/bfe36a21-3a36-4c89-9f17-eace4625ab86/download) ([Detail](https://mdr.nims.go.jp/filesets/bfe36a21-3a36-4c89-9f17-eace4625ab86.md))

## Id

47c56837-8ac5-40f2-b88c-9be3043e8f12

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-11-12T00:29:11.251553Z

## Updated at

2026-11-12T01:19:40.621630Z

## Published at

2026-11-12T03:44:12.172450Z

## Doi



## First published url

https://doi.org/10.35848/1882-0786/aebde4

## Date published

2026-11-01

## Recorded date published

2026-11-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Demonstration of β-Ga                    <sub>2</sub>                    O                    <sub>3</sub>                    MEMS
    resonators fabricated by crystallographic gas etching of (001) β-Ga                    <sub>2</sub>                    O                    <sub>3</sub>                    substrates
  title_type: original
  lang: en

## Description

- description: We demonstrated β-Ga2O3-based doubly-clamped-beam resonators elongated
    along the [100] direction, fabricated by crystallographic gas etching of a (001)
    β-Ga2O3 substrate. The beams exhibited clear resonance behavior, with quality
    factors (Q) on the order of 10^4 for fundamental-mode peaks. Additionally, the
    effective beam-length dependence of the resonance frequency (f0) confirmed that
    the beams were essentially free from residual strain and yielded a Young’s modulus
    consistent with the value calculated from reported elastic constants. Furthermore,
    the f0xQ values were higher than those of resonators fabricated using transferred
    exfoliated β-Ga2O3 flakes, highlighting the advantage of crystallographic etching
    for fabricating β-Ga2O3 microelectromechanical systems (MEMS).
  description_type: abstract
  lang: und

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
- name: Yuto Amano
  role: author
- name: Masataka Imura
  role: author
  orcid: https://orcid.org/0000-0002-4236-9549
- name: Meiyong Liao
  role: author
  orcid: https://orcid.org/0000-0003-1361-4266
- name: Ya Zhang
  role: author
  orcid: https://orcid.org/0000-0001-6108-5261

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: MEMS
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Express
  issn: '18820778'
  volume: '19'
  issue: '11'
  article_number: '116501'

## Conference



## Related item



## Funding

- identifier: JP24K01368
  funder_name: JSPS

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: bfe36a21-3a36-4c89-9f17-eace4625ab86
  filename: apex_19_11_116501.pdf
  content_type: application/pdf
  size: 1429266
  md5: eacc125680a317c967458c6a379a961b

## Thumbnail

fileset_id: bfe36a21-3a36-4c89-9f17-eace4625ab86
filename: apex_19_11_116501.pdf