# Wet etching of (−102) β-Ga                    <sub>2</sub>                    O                    <sub>3</sub>                    with tetramethylammonium hydroxide (TMAH)

https://mdr.nims.go.jp/datasets/4763abf9-f812-49ef-b7a8-d4b9b7db8a5c

## File

- [paper.pdf](https://mdr.nims.go.jp/filesets/4514ec44-7f69-45f3-98fb-fa2112b2489d/download) ([Detail](https://mdr.nims.go.jp/filesets/4514ec44-7f69-45f3-98fb-fa2112b2489d.md))
- [data_for_the_plots.zip](https://mdr.nims.go.jp/filesets/3d855eca-9ed6-4d20-8064-801c2938a375/download) ([Detail](https://mdr.nims.go.jp/filesets/3d855eca-9ed6-4d20-8064-801c2938a375.md))

## Id

4763abf9-f812-49ef-b7a8-d4b9b7db8a5c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-06-11T02:09:28.653468Z

## Updated at

2026-06-11T06:11:01.729981Z

## Published at

2026-06-11T07:27:48.165884Z

## Doi



## First published url

https://doi.org/10.1080/14686996.2026.2666988

## Date published

2026-12-31

## Recorded date published

2026-12-31

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: |-
    Wet etching of (−102) β-Ga
                        <sub>2</sub>
                        O
                        <sub>3</sub>
                        with tetramethylammonium hydroxide (TMAH)
  title_type: original
  lang: en

## Description

- description: We investigated wet etching on (−102) β-Ga2O3 substrates in heated
    25 wt% tetramethylammonium hydroxide (TMAH). The (−102) plane exhibited an etch
    rate that was one order of magnitude higher than those of widely used (100), (010),
    (001), and (−201) orientations. In addition, the temperature dependence of the
    etch rate over 50–90 °C was well described by the Arrhenius equation with an activation
    energy that was nearly independent of carrier concentration. These two features
    indicate that the (−102) orientation is suitable for fast and highly controllable
    wet-etch patterning. Regarding the etched morphology, the resulting etched sidewalls
    on the (−102) surface were dominated by the emergence of flat (001) and (−201)
    facets. Exploiting the pronounced development of these two facets, we obtained
    well-defined V-shaped trenches with a crystallographic opening angle of 130.0°
    when the etch windows were aligned along the [010] direction. In contrast to plasma-based
    dry etching, where outcomes often depend strongly on the specific apparatus and
    process conditions, this crystallography-driven facet-formation approach is expected
    to enable highly reproducible V-groove fabrication. Given the wide bandgap of
    β-Ga2O3, the proposed method is potentially applicable to V-groove trench metal–oxide–semiconductor
    field-effect transistors and transmission-type blazed gratings.
  description_type: abstract
  lang: und

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735

## Contact agent



## Publisher

organization: Informa UK Limited

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: wet etching
  schema: not_defined
- subject: TMAH
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Science and Technology of Advanced Materials
  issn: '14686996'
  volume: '27'
  issue: '1'
  article_number: '2666988'

## Conference



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## Funding

- identifier: JP24K01368
  funder_name: Japan Society for the Promotion of Science (JSPS), MEXT, Japan

## Instrument



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## Measurement method



## Specimen



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## Fileset

- id: 4514ec44-7f69-45f3-98fb-fa2112b2489d
  filename: paper.pdf
  content_type: application/pdf
  size: 5946070
  md5: d55935220977dc9948bf60b57ec291d7
- id: 3d855eca-9ed6-4d20-8064-801c2938a375
  filename: data_for_the_plots.zip
  content_type: application/zip
  size: 1738
  md5: 5a1e25e39ebe04468ab552677af724a6

## Thumbnail

fileset_id: 4514ec44-7f69-45f3-98fb-fa2112b2489d
filename: paper.pdf