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説明:

Monolayer transition metal dichalcogenides (TMDCs) have been widely studied for the fabrication of photovoltaic devices with high energy conversion efficiencies for future ultrathin optoelectronic devices. To create efficient photovoltaic devices, in-plane heterostructures, whose composition can be artificially tailored by chemical vapor deposition, are a promising approach to form p-n junctions spontaneously. Although sharp in-plane heterostructures are typically employed, their narrow heterointerfaces are prone to defect sensitivity and thermal losses, which can significantly reduce device performance. In this study, we demonstrated that the spontaneous p-n junction devices fabricated based on chemically synthesized compositionally graded monolayer WS2xSe2(1-x) alloys exhibited enhanced photoresponse performance. By conducting photocurrent and photoluminescence mappings, we revealed the correlation between the photocurrent generation behavior and local composition gradient. Moreover, the monolayer alloy device exhibited an open-circuit voltage as high as 0.66 V, highlighting the potential of a compositionally graded p-n junction for high-efficiency photovoltaic devices. Our study presents a new approach for the development of efficient TMDC-based optoelectronic devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Transition Metal Dichalcogenide

刊行年月日: 2026-02-12

出版者: Wiley

掲載誌:

• Small Methods (ISSN: 23669608) vol. 10 issue. 5 e01997

研究助成金:

• Core Research for Evolutional Science and Technology
• JSPS JP20H05867, JP20H05664, JP21H05232, JP21H05234, JP21H05236, JP22H00280, JP22H01899, JP22H04957, JP22K19059, JP22H01899, JP24H00044, and JP25K17908
• JST JPMJCR23A4, JPMJCR23O3, JPMJFR223Z and JPMJFR213X

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/smtd.202501997

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更新時刻: 2026-06-09 13:13:54 +0900

MDRでの公開時刻: 2026-06-09 15:25:41 +0900