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説明:

The spinel-structured ZnAl2O4 phosphors with deficiency of zinc were synthesized by high temperature solid state reaction, which were characterized by a series of techniques, including XRD, UV-Vis, XPS, EPR, DFT calculation, PLE/PL spectroscopy, and temperature-dependent PL spectra analysis. The deficiency of zinc results in the appearance of zinc vacancy (VZn) and oxygen vacancy (VO). Most of the oxygen vacancy is VO+, along with a small content of VO++ in ZnAl2O4. Under the excitation of ultraviolet light at 302 nm, the phosphor outputs a broad near-infrared emission band with the maximum at 715 nm. Higher concentration of zinc deficiency leads to stronger near-infrared luminescence, because of the increased oxygen vacancy. The phosphors exhibited a good thermal stability, and they were successfully packaged on the 285-nm UV LED chip, which outputted bright and intense near-infrared light, indicating that the NIR phosphors synthesized in this work have the prospect application in NIR LED.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: ZnAl2O4, Near-infrared luminescence, Oxygen defects, NIR LED

刊行年月日: 2022-10-29

出版者: Elsevier BV

掲載誌:

• JOURNAL OF LUMINESCENCE (ISSN: 00222313) vol. 253 p. 119455-119455

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4345

公開URL: https://doi.org/10.1016/j.jlumin.2022.119455

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更新時刻: 2024-10-29 16:30:20 +0900

MDRでの公開時刻: 2024-10-29 16:30:22 +0900