説明:
(abstract)Superlattices from twisted graphene mono- and bilayer systems give rise to on-demand many-body states such as Mott insulators and unconventional superconductors. These phenomena are ascribed to a combination of flat bands and strong Coulomb interactions. However, a comprehensive understanding is lacking because the low-energy band structure strongly changes when an electric field is applied to vary the
electron filling. Here, we gain direct access to the filling- dependent low-energy bands of twisted bilayer graphene (TBG)
and twisted double bilayer graphene (TDBG) by applying
microfocused angle-resolved photoemission spectroscopy to in
situ gated devices. Our findings for the two systems are in stark
contrast: the doping-dependent dispersion for TBG can be
described in a simple model, combining a filling-dependent rigid band shift with a many-body-related bandwidth change. In TDBG, on the other hand, we find a complex behavior of the low-energy bands, combining nonmonotonous bandwidth changes and tunable gap openings, which depend on the gate-induced displacement field. Our work establishes the extent of electric field tunability of the low-energy electronic states in twisted graphene superlattices and can serve to underpin the theoretical understanding of the resulting phenomena.
権利情報:
キーワード: Twisted graphene, low-energy bands, photoemission spectroscopy
刊行年月日: 2025-01-21
出版者: American Chemical Society (ACS)
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1021/acsnano.4c12905
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その他の識別子:
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更新時刻: 2025-02-05 12:30:18 +0900
MDRでの公開時刻: 2025-02-05 12:30:18 +0900
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jiang-et-al-2025-direct-view-of-gate-tunable-miniband-dispersion-in-graphene-superlattices-near-the-magic-twist-angle.pdf
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