# Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods

https://mdr.nims.go.jp/datasets/449d0f30-ac59-46eb-9871-4e1499bb1610

## File

- [JCG_Revised Manuscript Sumiya.pdf](https://mdr.nims.go.jp/filesets/287be5e9-79bc-4044-9542-226e30e492c4/download) ([Detail](https://mdr.nims.go.jp/filesets/287be5e9-79bc-4044-9542-226e30e492c4.md))

## Id

449d0f30-ac59-46eb-9871-4e1499bb1610

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-08-19T23:34:51.235975Z

## Updated at

2024-08-26T04:22:37.386564Z

## Published at

2026-04-06T23:23:40.964109Z

## Doi

https://doi.org/10.48505/nims.4685

## First published url

https://doi.org/10.1016/j.jcrysgro.2024.127701

## Date published

2024-04-06

## Recorded date published

2024-6

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Evaluation of defect density in bulk gallium nitrides by photothermal deflection
    spectroscopy and steady-state photocapacitance methods
  title_type: original
  lang: en

## Description

- description: Bulk GaN samples were characterized by both photothermal deflection
    spectroscopy (PDS) and steady-state photocapacitance (SSPC) methods. The PDS signal
    intensity in the bandgap was found to correlate quantitatively with the defect
    density estimated by the SSPC method. The defect density of GaN bulks fabricated
    by hydride vapor phase epitaxy (HVPE) was decreased by controlling the incorporation
    of carbon and silicon impurities. Differences in the reciprocal of the slope near
    the valence band maximum and the signal intensity in the bandgap among HVPE GaN
    bulks could be detected by PDS, although they had the same crystalline quality.
    PDS can be used to evaluate the GaN bulks that have been improved with a highly
    insulative property caused by Fe- doping or low carbon incorporation.
  description_type: abstract
  lang: und

## Creator

- name: Masatomo Sumiya
  role: author
  orcid: https://orcid.org/0000-0003-0960-3812
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Hajime Fujikura
  role: author
- name: Yoshitaka Nakano
  role: author
- name: Shuhei Yashiro
  role: author
- name: Yasuo Koide
  role: author
  orcid: https://orcid.org/0000-0001-8321-9822
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Tohru Honda
  role: author

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: GaN bulk
  schema: not_defined
- subject: defect level
  schema: not_defined
- subject: photothermal deflection spectroscopy
  schema: not_defined

## Rights

- description: "© 2024. Licensed under the Creative Commons https://creativecommons.org/licenses/by-nc-nd/4.0/."
  identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-04-06
end_date: 2026-04-07

## Journal

- title: Journal of Crystal Growth
  issn: '00220248'
  volume: '635'
  article_number: '127701'

## Conference



## Related item



## Funding

- identifier: JPJ005357
  funder_name: Government of Japan Ministry of Education Culture Sports Science and
    Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: 287be5e9-79bc-4044-9542-226e30e492c4
  filename: JCG_Revised Manuscript Sumiya.pdf
  content_type: application/pdf
  size: 676835
  md5: 954a8ff8bef29ec61b137cefcb5a9e84

## Thumbnail

fileset_id: 287be5e9-79bc-4044-9542-226e30e492c4
filename: JCG_Revised Manuscript Sumiya.pdf