# Correlating Carrier Localization to Optoelectronic Behavior of Monolayer MoS<sub>2</sub>

https://mdr.nims.go.jp/datasets/4450e750-5a22-4cf5-8648-c19c7ca6f4af

## File

- [2025A01223G_Role_of_carrier_localization_on_the_optoelectronic_transport_in_single_layer_Mos2__SreemantaMitra_.pdf](https://mdr.nims.go.jp/filesets/c7523acf-b460-4a5d-9a61-bd4929fd2ae9/download) ([Detail](https://mdr.nims.go.jp/filesets/c7523acf-b460-4a5d-9a61-bd4929fd2ae9.md))
- [2025A01223G_SI_am5c08111_si_001.pdf](https://mdr.nims.go.jp/filesets/64eb1643-b367-4b01-92d0-1b98171b351b/download) ([Detail](https://mdr.nims.go.jp/filesets/64eb1643-b367-4b01-92d0-1b98171b351b.md))

## Id

4450e750-5a22-4cf5-8648-c19c7ca6f4af

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-24T05:27:27.844892Z

## Updated at

2026-07-27T00:46:50.126036Z

## Published at

2026-07-27T03:27:56.417714Z

## Doi



## First published url

https://doi.org/10.1021/acsami.5c08111

## Date published

2025-07-25

## Recorded date published



## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Correlating Carrier Localization to Optoelectronic Behavior of Monolayer
    MoS<sub>2</sub>
  title_type: original
  lang: en

## Description

- description: In nanoscale semiconductor devices, electrical conductivity is significantly
    influenced by inherent disorder. This study examines the electrical transport
    properties of a single-layer MoS2 field-effect transistor on a few-layered hBN
    substrate. Temperature-dependent transport measurements reveal that electrical
    conductivity is predominantly governed by a combination of simple activated and
    variable-range hopping mechanisms. The calculations on the experimental data yield
    a localization length around 5 nm for a typical defect density near the Fermi
    energy as 10<sup>14</sup> eV<sup>−1</sup> cm<sup>−2</sup>. Additionally, optoelectronic
    transport measurements exhibit temperature-dependent persistent photoconductivity,
    attributed to electron localization within defect states. Calculations based on
    the temperature-dependent photoconductivity relaxation indicate a localization
    length of 7 nm, suggesting a direct correlation between the two phenomena.</p>
  description_type: abstract
  lang: en

## Creator

- name: Arup Singha
  role: author
- name: Aparna P
  role: author
- name: Agniva Paul
  role: author
- name: Sanjitha K. Shetty
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Arindam Ghosh
  role: author
- name: Sreemanta Mitra
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: MoS₂ field-effect transistor
  schema: not_defined
- subject: Variable-range hopping
  schema: not_defined
- subject: Persistent photoconductivity
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Article
    that appeared in final form in ACS Applied Materials & Interfaces, copyright ©
    2025 American Chemical Society. To access the final published article, see https://doi.org/10.1021/acsami.5c08111.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-07-25
end_date: 2026-07-25

## Journal

- title: ACS Applied Materials & Interfaces
  issn: '19448252'
  volume: '17'
  issue: '31'
  start_page: 44816
  end_page: 44248
  article_number: acsami.5c08111

## Conference



## Related item



## Funding

- funder_name: Gandhi Institute of Technology and Management
- funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: SUR/2022/000935
  funder_name: Department of Science and Technology, Ministry of Science and Technology,
    India
- identifier: JPMJCR24A5
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- funder_name: Department of Science and Technology, Ministry of Science and Technology,
    India
- identifier: 21H05233
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: 23H02052
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- funder_name: Ministry of Education, India

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: c7523acf-b460-4a5d-9a61-bd4929fd2ae9
  filename: 2025A01223G_Role_of_carrier_localization_on_the_optoelectronic_transport_in_single_layer_Mos2__SreemantaMitra_.pdf
  content_type: application/pdf
  size: 5285930
  md5: e21f76136bcfc7c21215e65114364e70
- id: 64eb1643-b367-4b01-92d0-1b98171b351b
  filename: 2025A01223G_SI_am5c08111_si_001.pdf
  content_type: application/pdf
  size: 438101
  md5: 7fd4b9a4f3098a64a6d3cf17ce8a6744

## Thumbnail

fileset_id: c7523acf-b460-4a5d-9a61-bd4929fd2ae9
filename: 2025A01223G_Role_of_carrier_localization_on_the_optoelectronic_transport_in_single_layer_Mos2__SreemantaMitra_.pdf