Francesca Falorsi
;
Marco Dembecki
;
Christian Eckel
;
Monica Kolek Martinez de Azagra
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Martin Statz
;
R. Thomas Weitz
説明:
(abstract)The fundamental question how to describe Ohmic resistance at the nanoscale has been answered by Landauer in his seminal picture of the so-called Landauer resistivity dipole. This picture has been theoretically well understood, however experimentally there are only few studies due to the need for a non-invasive local probe. Here we use the nanometer lateral resolution of near-field photocurrent imaging to thoroughly characterize a buried monolayer – bilayer graphene interface as an ideal one dimensional defect for the Landauer resistivity dipole. Via systematic tuning of the overall charge carrier density and the current flow we are able to detect the formation of Landauer resistivity dipoles due to charge carrier accumulation around the one dimensional defects. We found that, for Fermi energy values near the charge neutrality point (i.e. at low hole or electron doping), the photocurrent exhibits the same polarity as the applied source-drain voltage, which is consistent with changes in carrier concentration induced by the Landauer resistivity dipoles. This signature is no longer evident at higher charge carrier density in agreement with the performed numerical calculations. Photocurrent nanoscopy can thus serve as non-invasive technique to study local dissipation at hidden interfaces.
権利情報:
キーワード: Landauer resistivity dipole (LRD) , photocurrent nanoscopy, graphene interface
刊行年月日: 2025-05-28
出版者: American Chemical Society (ACS)
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1021/acs.nanolett.5c00437
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その他の識別子:
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更新時刻: 2026-03-10 12:30:12 +0900
MDRでの公開時刻: 2026-03-10 09:03:18 +0900
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falorsi-et-al-2025-landauer-resistivity-dipole-at-one-dimensional-defect-revealed-via-near-field-photocurrent-nanoscopy.pdf
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