# High Doping Activation (≥1020 cm−3) in Tensile-Strained n‑Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing

https://mdr.nims.go.jp/datasets/43d0a744-8aad-42cd-a4cf-b4f83aa8ab2c

## File

- [Manuscript_revised.docx](https://mdr.nims.go.jp/filesets/8a5fb045-c6fd-4059-a3b7-b3e9f696d8e9/download) ([Detail](https://mdr.nims.go.jp/filesets/8a5fb045-c6fd-4059-a3b7-b3e9f696d8e9.md))

## Id

43d0a744-8aad-42cd-a4cf-b4f83aa8ab2c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-09-21T01:39:21.771534Z

## Updated at

2025-06-02T23:30:17.506593Z

## Published at

2025-06-02T23:23:33.162007Z

## Doi

https://doi.org/10.48505/nims.4767

## First published url

https://doi.org/10.1021/acsaelm.4c00399

## Date published

2024-06-25

## Recorded date published

2024-6-25

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: High Doping Activation (≥1020 cm−3) in Tensile-Strained n‑Ge Alloys Achieved
    by High-Speed Continuous-Wave Laser Annealing
  title_type: original
  lang: en

## Description

- description: "Germanium-based materials are essential for the integration of Group
    IV optoelectronics in silicon devices. In addition to tensile strain, high n-type
    doping is critical, as it provides abundant carriers for recombination, potentially
    enabling higher photoemissions from Ge-based materials. We report here record-high
    68% doping activation on n-Ge with ≥1020 cm−3 carrier density. This study centers
    on Sb-doped n-type Ge-on-insulator thin films with Si or Sn alloying grown using
    high-speed continuous-wave laser annealing (CWLA).\r\nCrystal mapping revealed
    the growth of polycrystalline n-GeSn and n-GeSi thin films with grain sizes up
    to 4 μm in diameter. Micro-PL measurements showed the PL intensity of n-Ge to
    be enhanced by the alloying of Sn and Si, with peak intensity 1.5 and 3 times
    higher for n-GeSn and n-GeSi, respectively. Raman peak red shift and broadening
    are observed in the samples, indicating high tensile strain and n-type doping.
    The measured carrier density of CWLA-grown films aligns well with the PL intensity
    trend, suggesting the process has promise for achieving electrically improved
    Ge-based thin films."
  description_type: abstract
  lang: eng

## Creator

- name: Rahmat Hadi Saputro
  role: author
  orcid: https://orcid.org/0000-0001-7035-1680
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials
    Field/Nanostructured Semiconducting Materials Group
  ror: https://ror.org/026v1ze26
- name: Tatsuro Maeda
  role: author
  organization: AIST
- name: Kaoru Toko
  role: author
  organization: Graduate School of Pure and Applied Sciences University of Tsukuba
- name: Ryo Matsumura
  role: author
  orcid: https://orcid.org/0000-0003-2303-4978
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials
    Field/Nanostructured Semiconducting Materials Group
  ror: https://ror.org/026v1ze26
- name: Naoki Fukata
  role: author
  orcid: https://orcid.org/0000-0002-0986-8485
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: American Chemical Society

## Managing organization



## Keyword

- subject: germanium
  schema: not_defined
- subject: thin film
  schema: not_defined
- subject: polycrystalline growth
  schema: not_defined
- subject: laser annealing
  schema: not_defined
- subject: impurity doping
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in ACS Applied Electronic Materials, copyright © 2024
    American Chemical Society after peer review and technical editing by the publisher.
    To access the final edited and published work see https://doi.org/10.1021/acsaelm.4c00399
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-06-03
end_date: 2025-06-03

## Journal

- title: ACS Applied Electronic Materials
  issn: '26376113'
  volume: '6'
  issue: '6'

## Conference



## Related item



## Funding

- identifier: JP20K14796, JP23K13370
  funder_name: JSPS
  description: 光電融合LSIへ向けた絶縁膜上におけるGe系光学材料の結晶成長と光電デバイス応用

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## Thumbnail

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