# Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

https://mdr.nims.go.jp/datasets/437e581a-3200-44b5-830b-a7be47f0de21

## File

- [GaN-HEMT_AlN-SiC paper_Sumiya_2.0.pdf](https://mdr.nims.go.jp/filesets/8d2a6ef1-9a21-4ac1-9921-0156073f1018/download) ([Detail](https://mdr.nims.go.jp/filesets/8d2a6ef1-9a21-4ac1-9921-0156073f1018.md))

## Id

437e581a-3200-44b5-830b-a7be47f0de21

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-12-09T00:00:35.824601Z

## Updated at

2024-12-10T07:56:26.112386Z

## Published at

2024-12-10T07:56:26.174881Z

## Doi

https://doi.org/10.48505/nims.5131

## First published url

https://doi.org/10.35848/1347-4065/ace671

## Date published

2023-08-01

## Recorded date published

2023-8-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC
    templates for high electron mobility transistor application
  title_type: original
  lang: en

## Description

- description: GaN films were grown on HVPE-AlN/SiC templates by metalorganic chemical
    vapor deposition (MOCVD) without annealing a reactor to eliminate memory effect.
    Step-terrace structure and smooth surface were obtained for GaN film with a thickness
    of ~200 nm. Subsequently, AlGaN/GaN heterostructures for the application of high
    electron mobility transistors (HEMTs) with thin GaN channel were fabricated with
    no C or Fe-doped GaN buffer layer. The interface quality at AlGaN/GaN heterostructure
    was good enough for two-dimensional electron gas (2DEG) to exhibit Shubnikov-de
    Haas oscillation in the magnetic field at 1.8 K. The GaN HEMTs with a thin channel
    on the AlN/SiC templates exhibited both pinch-off character and conventional properties.
    In view of both the shorter epitaxial-growth time and higher thermal conduction,
    HVPE-AlN/SiC templates are applicable to the fabrication of GaN HEMTs by MOCVD.
  description_type: abstract
  lang: und

## Creator

- name: Masatomo Sumiya
  role: author
  orcid: https://orcid.org/0000-0003-0960-3812
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Osamu Goto
  role: author
- name: Yuki Takahara
  role: author
- name: Yasutaka Imanaka
  role: author
  orcid: https://orcid.org/0000-0003-2804-4438
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Liwen Sang
  role: author
  orcid: https://orcid.org/0000-0003-0946-1025
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Noboru Fukuhara
  role: author
- name: Taichiro Konno
  role: author
- name: Fumimasa Horikiri
  role: author
- name: Takeshi Kimura
  role: author
- name: Akira Uedono
  role: author
- name: Hajime Fujikura
  role: author

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: HEMT
  schema: not_defined
- subject: III-V nitride semiconductor
  schema: not_defined
- subject: heterointerface
  schema: not_defined

## Rights

- description: This Accepted Manuscript is available for reuse under a CC BY-NC-ND
    licence after the 12 month embargo period provided that all the terms of the licence
    are adhered to
  identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Japanese Journal of Applied Physics
  issn: '13474065'
  volume: '62'
  issue: '8'
  article_number: " 085501"

## Conference



## Related item



## Funding

- funder_name: National Institute for Materials Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 8d2a6ef1-9a21-4ac1-9921-0156073f1018
  filename: GaN-HEMT_AlN-SiC paper_Sumiya_2.0.pdf
  content_type: application/pdf
  size: 547728
  md5: a29a4336a855e1c3a97e35f35dbd4217

## Thumbnail

fileset_id: 8d2a6ef1-9a21-4ac1-9921-0156073f1018
filename: GaN-HEMT_AlN-SiC paper_Sumiya_2.0.pdf