# <i>I-V-T</i> Characteristics and Temperature Sensor Performance of a Fully 2-D WSe<sub>2</sub>/MoS<sub>2</sub> Heterojunction Diode at Cryogenic Temperatures

https://mdr.nims.go.jp/datasets/436a08ea-2d91-4272-9b08-107912867ccf

## File

- [I-V-T_Characteristics_and_Temperature_Sensor_Performance_of_a_Fully_2-D_WSe2_MoS2_Heterojunction_Diode_at_Cryogenic_Temperatures.pdf](https://mdr.nims.go.jp/filesets/41dbcc37-4a31-4bc1-91f3-3cbf634984ea/download) ([Detail](https://mdr.nims.go.jp/filesets/41dbcc37-4a31-4bc1-91f3-3cbf634984ea.md))

## Id

436a08ea-2d91-4272-9b08-107912867ccf

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-14T02:02:10.433655Z

## Updated at

2025-02-14T07:30:13.380395Z

## Published at

2025-02-14T07:30:14.446484Z

## Doi



## First published url

https://doi.org/10.1109/jeds.2023.3289758

## Date published

2023-06-26

## Recorded date published

2023

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: "<i>I-V-T</i> Characteristics and Temperature Sensor Performance of a Fully
    2-D WSe<sub>2</sub>/MoS<sub>2</sub> Heterojunction Diode at Cryogenic Temperatures"
  title_type: original
  lang: en

## Description

- description: In this work, we demonstrate the usability of a fully-2D-material based
    device consisting of MoS2/WSe2 heterojunction encapsulated by hBN and contacted
    by graphene as temperature sensor for linear temperature measurement at cryogenic
    temperatures. More precisely, temperatures in the range of 10 K up to 300 K were
    applied to the device while recording the I-V characteristics. From this, we had
    a deeper look on the current transport mechanism by obtaining the activation energy
    of the saturation current in the Arrhenius diagram. It is 1.3 eV, which can be
    related to the bandgap of MoS2 or WSe2 (both nominal 1.3 eV) as for traditional
    pn-junction diodes in bulk materials. Furthermore, we applied a constant forward
    current to the device while measuring the voltage drop at different temperatures
    to investigate the temperature-sensor per-formance. In the range of 40 K up to
    300 K, the sensitivity of the sensor is ~2 mV/K, which is comparable to Si devices,
    while the linearity is still lower (R2 ~ 0.94). On the other hand, the demonstrated
    device consists only of 2D materials and is, thus, substrate independent, ultra-thin,
    and can be fabricated on a fully flexible substrate in a low-cost process.
  description_type: abstract
  lang: und

## Creator

- name: Christian D. Matthus
  role: author
- name: Phanish Chava
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Thomas Mikolajick
  role: author
- name: Manfred Helm
  role: author
- name: Artur Erbe
  role: author

## Contact agent



## Publisher

organization: Institute of Electrical and Electronics Engineers (IEEE)

## Managing organization



## Keyword

- subject: MoS2/WSe2 heterojunction
  schema: not_defined
- subject: temperature sensor
  schema: not_defined
- subject: cryogenic temperatures
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: IEEE Journal of the Electron Devices Society
  issn: '21686734'
  volume: '11'
  start_page: 359
  end_page: 366

## Conference



## Related item



## Funding

- identifier: 3146229002/16ES1066K
  funder_name: SPES3 Project funded by the German Ministry for Education and Research
    (BMBF) through the Forschung für neue Mikroelektronik (ForMikro) Program
- identifier: '100382146'
  funder_name: European Social Fund and the Free State of Saxony in the Project Re-Learning

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Software



## Custom property



## Fileset

- id: 41dbcc37-4a31-4bc1-91f3-3cbf634984ea
  filename: I-V-T_Characteristics_and_Temperature_Sensor_Performance_of_a_Fully_2-D_WSe2_MoS2_Heterojunction_Diode_at_Cryogenic_Temperatures.pdf
  content_type: application/pdf
  size: 2249859
  md5: 8d48f2d4e9cabdb7825d9830be772fb5

## Thumbnail

fileset_id: 41dbcc37-4a31-4bc1-91f3-3cbf634984ea
filename: I-V-T_Characteristics_and_Temperature_Sensor_Performance_of_a_Fully_2-D_WSe2_MoS2_Heterojunction_Diode_at_Cryogenic_Temperatures.pdf