Ryo Matsumoto
(National Institute for Materials Science)
;
Kazuki Yamane
(National Institute for Materials Science)
;
Terumasa Tadano
(National Institute for Materials Science)
;
Kensei Terashima
(National Institute for Materials Science)
;
Toru Shinmei
;
Tetsuo Irifune
;
Yoshihiko Takano
(National Institute for Materials Science)
説明:
(abstract)Emergence of Superconductivity at 20 K in Th3P4-type In3−xS4 Synthesized by Diamond Anvil Cell with Boron-doped Diamond Electrodesについて
権利情報:
キーワード: Superconductivity, high pressure, Indium sulfide, diamond anvil cell
刊行年月日: 2025-02-25
出版者: American Chemical Society (ACS)
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5554
公開URL: https://doi.org/10.1021/acs.chemmater.4c03301
関連資料:
その他の識別子:
連絡先:
更新時刻: 2026-02-14 21:44:18 +0900
MDRでの公開時刻: 2026-02-12 09:15:20 +0900
| ファイル名 | サイズ | |||
|---|---|---|---|---|
| ファイル名 |
Emergence of Superconductivity at 20 K in Th3P4-type In3-x S4 Synthesized by Diamond Anvil Cell with Boron-Doped Diamond Electrodes.pdf
(サムネイル)
application/pdf |
サイズ | 1.66MB | 詳細 |