# Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers https://mdr.nims.go.jp/datasets/4190371a-58b3-4f9f-b344-f9757d096515 ## File - [JAP135(2024)185701_GaNMGRCWalukiewiczTribute.pdf](https://mdr.nims.go.jp/filesets/4955463f-9099-4563-b9c4-88f747326a24/download) ([Detail](https://mdr.nims.go.jp/filesets/4955463f-9099-4563-b9c4-88f747326a24.md)) ## Id 4190371a-58b3-4f9f-b344-f9757d096515 ## Local identifier ## Visibility open_to_public ## State published ## Created at 2024-05-08T23:18:59.063851Z ## Updated at 2024-05-09T07:30:16.840721Z ## Published at 2024-05-09T07:30:17.229559Z ## Doi ## First published url https://doi.org/10.1063/5.0201931 ## Date published 2024-05-14 ## Recorded date published 2024-5-14 ## Resource type journal_article ## Manuscript type vor ## Collection ## Title - title: Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers title_type: original lang: en ## Description - description: "For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely nonradiative recombination centers and deep-state radiative recombination centers, on the carrier recombination dynamics is an essential task. By using the combination of time-resolved photoluminescence and positron annihilation spectroscopy (PAS) measurements, the origins of major MGRCs in the state-of-the-art GaN epilayers, bulk crystals, and Mg-implanted layers were identified and their concentrations were quantified for deriving the capture coefficients of minority carriers. In this article, potential standardization of the room-temperature photoluminescence lifetime for the near-band-edge emission (\U0001D70FPLRT) as the concentration of major MGRCs well below the detection limit of PAS is proposed. For n-GaN substrates and epilayers grown from the vapor phase, \U0001D70FPLRT was limited by the concentration of carbon on N sites or divacancies comprising a Ga vacancy (VGa) and a N vacancy (VN), [VGaVN], when carbon concentration was higher or lower, respectively, than approximately 1016 cm-3. Here, carbon and VGaVN act as major deep-state radiative and nonradiative recombination centers, respectively. While, major MGRCs in bulk GaN crystals were identified as VGa(VN)3 vacancy clusters in Na-flux GaN and VGa or VGaVN buried by a hydrogen and/or VGa decorated with oxygen on N sites, VGa(ON)3-4, inammonothermal GaN. The values of \U0001D70FPLRT in n-GaN samples are compared with those of p-GaN, in which \U0001D70FPLRT was limited by the concentration of VGa(VN)2 in Mg-doped epilayers while by the concentrations of VGaVN and (VGaVN)3 in Mg-implanted GaN right after the implantation and after appropriate activation annealings, respectively." description_type: abstract lang: eng ## Creator - name: Shigefusa F. Chichibu role: author organization: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University - name: Kohei Shima role: author organization: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University - name: Akira Uedono role: author organization: Department of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan - name: Shoji Ishibashi role: author organization: AIST - name: Hiroko Iguchi role: author organization: TOYOTA CENTRAL R&D LABS., INC. - name: Tetsuo Narita role: author organization: TOYOTA CENTRAL R&D LABS., INC. - name: Keita Kataoka role: author organization: TOYOTA CENTRAL R&D LABS., INC. - name: Ryo Tanaka role: author organization: Fuji Electric Corporation - name: Shinya Takashima role: author organization: Fuji Electric Corporation - name: Katsunori Ueno role: author organization: Fuji Electric Corporation - name: Masaharu Edo role: author organization: Fuji Electric Corporation - name: Hirotaka Watanabe role: author organization: Institute of Materials and Systems for Sustainability, Nagoya University - name: Atsushi Tanaka role: author organization: Institute of Materials and Systems for Sustainability, Nagoya University - name: Yoshio Honda role: author organization: Institute of Materials and Systems for Sustainability, Nagoya University - name: Jun Suda role: author organization: Institute of Materials and Systems for Sustainability, Nagoya University - name: Hiroshi Amano role: author organization: Institute of Materials and Systems for Sustainability, Nagoya University - name: Tetsu Kachi role: author organization: Institute of Materials and Systems for Sustainability, Nagoya University - name: Toshihide Nabatame role: author orcid: https://orcid.org/0000-0002-5973-0230 organization: National Institute for Materials Science department: Research Center for Materials Nanoarchitectonics (MANA) ror: https://ror.org/026v1ze26 - name: Yoshihiro Irokawa role: author orcid: https://orcid.org/0000-0002-6531-4356 organization: National Institute for Materials Science department: Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group ror: https://ror.org/026v1ze26 - name: Yasuo Koide role: author orcid: https://orcid.org/0000-0001-8321-9822 organization: National Institute for Materials Science department: Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group ror: https://ror.org/026v1ze26 ## Contact agent ## Publisher organization: American Institute of Physics ## Managing organization ## Keyword - subject: GaN schema: not_defined ## Rights - identifier: https://creativecommons.org/licenses/by/4.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo ## Journal - title: JOURNAL OF APPLIED PHYSICS issn: '10897550' volume: '135' start_page: 185701 end_page: 185701 ## Conference ## Related item ## Funding ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 4955463f-9099-4563-b9c4-88f747326a24 filename: JAP135(2024)185701_GaNMGRCWalukiewiczTribute.pdf content_type: application/pdf size: 4026272 md5: c2f6eb85049ea601ed372c3df7141449 ## Thumbnail fileset_id: 4955463f-9099-4563-b9c4-88f747326a24 filename: JAP135(2024)185701_GaNMGRCWalukiewiczTribute.pdf