# Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit

https://mdr.nims.go.jp/datasets/4097dabe-8db2-4879-b396-81bcbd637c8d

## File

- [s41598-017-09739-4.pdf](https://mdr.nims.go.jp/filesets/dabb0d74-84cf-4bb0-9887-9a75520a4a1f/download) ([Detail](https://mdr.nims.go.jp/filesets/dabb0d74-84cf-4bb0-9887-9a75520a4a1f.md))

## Id

4097dabe-8db2-4879-b396-81bcbd637c8d

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-28T02:09:47.832221Z

## Updated at

2025-02-28T07:31:06.419506Z

## Published at

2025-02-28T07:31:06.518369Z

## Doi



## First published url

https://doi.org/10.1038/s41598-017-09739-4

## Date published

2017-09-28

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Direct exciton emission from atomically thin transition metal dichalcogenide
    heterostructures near the lifetime limit
  title_type: original
  lang: en

## Description

- description: We demonstrate the reduction of the inhomogeneous linewidth of the
    free excitons in atomically thin transition metal dichalcogenides (TMDCs)  by
    encapsulation within few nanometer thick hBN. Encapsulation is shown to result
    in a significant reduction of the 10K excitonic linewidths down to ∼ 3.5meV
    for n-MoSe2, ∼ 5.0meV for p-WSe2 and ∼ 4.8meV for n-MoS2. Evidence
    is obtained that the hBN environment effectively lowers the Fermi level since
    the relative spectral weight shifts towards the neutral exciton emission in n-doped
    TMDCs and towards charged exciton emission in p-doped TMDCs. Moreover, we find
    that fully encapsulated MoS2 shows resolvable exciton and trion emission even
    after high power density excitation in contrast to non-encapsulated materials.
  description_type: abstract
  lang: und

## Creator

- name: Jakob Wierzbowski
  role: author
- name: Julian Klein
  role: author
- name: Florian Sigger
  role: author
- name: Christian Straubinger
  role: author
- name: Malte Kremser
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Ursula Wurstbauer
  role: author
- name: Alexander W. Holleitner
  role: author
- name: Michael Kaniber
  role: author
- name: Kai Müller
  role: author
- name: Jonathan J. Finley
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Transition metal dichalcogenides
  schema: not_defined
- subject: hexagonal boron nitride
  schema: not_defined
- subject: excitons
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Scientific Reports
  issn: '20452322'
  volume: '7'
  issue: '1'
  article_number: '12383'

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## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: dabb0d74-84cf-4bb0-9887-9a75520a4a1f
  filename: s41598-017-09739-4.pdf
  content_type: application/pdf
  size: 3262970
  md5: 6073e1e9c13770ac00bd2e85196a55d0

## Thumbnail

fileset_id: dabb0d74-84cf-4bb0-9887-9a75520a4a1f
filename: s41598-017-09739-4.pdf