# Minigap-induced negative differential resistance in multilayer <math>  <mrow>    <mi>Mo</mi>    <msub>      <mi>S</mi>      <mn>2</mn>    </msub>  </mrow></math>-based tunnel junctions

https://mdr.nims.go.jp/datasets/3ed473d5-cceb-44ea-a05a-50d1465daadd

## File

- [PhysRevResearch.6.033011.pdf](https://mdr.nims.go.jp/filesets/d911de95-c8bf-4146-a545-c6a52be8aaba/download) ([Detail](https://mdr.nims.go.jp/filesets/d911de95-c8bf-4146-a545-c6a52be8aaba.md))

## Id

3ed473d5-cceb-44ea-a05a-50d1465daadd

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-05T04:59:02.492170Z

## Updated at

2025-02-06T03:30:24.859152Z

## Published at

2025-02-06T03:30:25.066874Z

## Doi



## First published url

https://doi.org/10.1103/physrevresearch.6.033011

## Date published

2024-07-01

## Recorded date published

2024-7

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: "Minigap-induced negative differential resistance in multilayer \n<mml:math
    xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"><mml:mrow><mml:mi>Mo</mml:mi><mml:msub><mml:mi
    mathvariant=\"normal\">S</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>\n-based
    tunnel junctions"
  title_type: original
  lang: en

## Description

- description: "Despite extensive research, the high-energy band properties of transition
    metal dichalcogenides remain unex- plored. Here, we reveal that a multilayer MoS2-based
    tunnel junction exhibits substantial negative differential resistance (NDR) owing
    to the presence of a minigap, which is the energy gap between the upper and lower
    bands of the valence band at the \U0010FC00 point. We fabricated a highly p-doped
    multilayer p+-MoS2/h-BN/p+-MoS2 tunnel junction. When a bias is applied across
    the junction, holes at the Fermi level at the \U0010FC00 point in the valence
    band of the source-side p+-MoS2 resonantly tunnel to the drain-side p+-MoS2 with
    momentum conservation. When the energy of the injected hole coincides with the
    minigap of the drain-side p+-MoS2, the tunneling conductance is suppressed; thus,
    NDR is observed in the current-voltage characteristics. We identified minigap-induced
    NDR over a broad range of MoS2 thicknesses, including the bulk, that was observable
    even at room temperature."
  description_type: abstract
  lang: und

## Creator

- name: Seiya Kawasaki
  role: author
- name: Kei Kinoshita
  role: author
  orcid: https://orcid.org/0009-0005-4586-734X
- name: Rai Moriya
  role: author
  orcid: https://orcid.org/0000-0001-7471-7432
- name: Momoko Onodera
  role: author
  orcid: https://orcid.org/0000-0001-9457-6796
- name: Yijin Zhang
  role: author
  orcid: https://orcid.org/0000-0003-1127-1124
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
- name: Takao Sasagawa
  role: author
  orcid: https://orcid.org/0000-0003-0149-6696
- name: Tomoki Machida
  role: author
  orcid: https://orcid.org/0000-0002-1938-7415

## Contact agent



## Publisher

organization: American Physical Society (APS)

## Managing organization



## Keyword

- subject: Negative differential resistance
  schema: not_defined
- subject: MoS2
  schema: not_defined
- subject: tunnel junction
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Physical Review Research
  issn: '26431564'
  volume: '6'
  issue: '3'
  article_number: '033011'

## Conference



## Related item



## Funding

- identifier: JPMJCR15F3
  funder_name: Japan Science and Technology Corporation
- identifier: JPMJCR20B4
  funder_name: Japan Science and Technology Corporation
- identifier: JPMJMI21G9
  funder_name: Japan Science and Technology Corporation
- identifier: JPMJPR20L5
  funder_name: Japan Science and Technology Corporation
- identifier: JP20H00127
  funder_name: Japan Society for the Promotion of Science
- identifier: JP20H00354
  funder_name: Japan Society for the Promotion of Science
- identifier: JP21H04652
  funder_name: Japan Society for the Promotion of Science
- identifier: JP21H05232
  funder_name: Japan Society for the Promotion of Science
- identifier: JP21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: JP21H05234
  funder_name: Japan Society for the Promotion of Science
- identifier: JP21H05236
  funder_name: Japan Society for the Promotion of Science
- identifier: JP21K18181
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22H01898
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22K18317
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22K14559
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22J22105
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22KJ1104
  funder_name: Japan Society for the Promotion of Science
- identifier: JP23H02052
  funder_name: Japan Society for the Promotion of Science
- funder_name: Inoue Foundation for Science
- funder_name: Tokuyama Science Foundation
- funder_name: Support Center for Advanced Telecommunications Technology Research
    Foundation

## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: d911de95-c8bf-4146-a545-c6a52be8aaba
  filename: PhysRevResearch.6.033011.pdf
  content_type: application/pdf
  size: 3455778
  md5: 3ab17da4c2be523cb8d9b9c81dbcbccd

## Thumbnail

fileset_id: d911de95-c8bf-4146-a545-c6a52be8aaba
filename: PhysRevResearch.6.033011.pdf