# A Rhombic Dodecahedral Honeycomb Structure with Cation Vacancy Ordering in a !‑Ga2O3 Crystal

https://mdr.nims.go.jp/datasets/3e3c3dce-a7af-4c26-992b-8d676a67e5a0

## File

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## Id

3e3c3dce-a7af-4c26-992b-8d676a67e5a0

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-04-27T05:50:18.487616Z

## Updated at

2024-03-05T03:30:13.241849Z

## Published at

2024-03-05T03:30:13.556165Z

## Doi

https://doi.org/10.48505/nims.4421

## First published url

https://doi.org/10.1021/cg400542x

## Date published

2013-08-07

## Recorded date published

2013-8-7

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: γ-Ga2O3結晶中の陽イオン空孔を伴う菱形十二面体ハニカム構造
  title_type: alternative
  lang: ja
- title: A Rhombic Dodecahedral Honeycomb Structure with Cation Vacancy Ordering in
    a !‑Ga2O3 Crystal
  title_type: original
  lang: en

## Description

- description: Crystal structure of a γ-Ga2O3 layer grown epitaxially on an MgO substrate
    by a vapor phase transport method was investigated by transmission electron micrscopy,
    electron diffraction, and scanning transmission electron microscopy with aberration
    correctors. Some forbidden reflections were excited in electron diffraction patterns
    by double reflection from the vicinity of the substrate interface. Anti-phase
    boundaries are observed in an atomic column imaging by the high angle annular
    dark field images. A structure model is proposed to explaine the experimental
    results. Cation vacancy ordering is introduced in the structure model to distort
    the γ-Ga2O3 crystal lattice for one axis and reduce the mismatch with the substrate.
    Some grains are formed and alter the directions to reduce the distortion for the
    other axis. The grains are stacked with {110} phase boundaries and form a rhombic
    dodecahedral honeycomb. The rhombic dodecahedral honeycomb structure model with
    cation vacancy ordering is stabilized by the lattice mismatch between the γ-Ga2O3
    crystal and the MgO substrate, and it disappears at a depth of 170 nm from the
    interface.
  description_type: abstract
  lang: eng

## Creator

- name: Masanori Mitome
  role: author
  orcid: https://orcid.org/0000-0003-1192-9838
- name: Shigemi Kohiki
  role: author
- name: Takuro Nagai
  role: author
- name: Keiji Kurashima
  role: author
- name: Koji Kimoto
  role: author
- name: Yoshio Bando
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: gamma-Ga2O3
  schema: not_defined
- subject: crystal structure
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in CRYSTAL GROWTH & DESIGN, copyright © 2013 American
    Chemical Society after peer review and technical editing by the publisher. To
    access the final edited and published work see https://doi.org/10.1021/cg400542x.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2013-07-11
end_date: 2014-07-11

## Journal

- title: CRYSTAL GROWTH & DESIGN
  issn: '15287483'
  volume: '13'
  issue: '8'
  start_page: 3577
  end_page: 3581

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## Specimen



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## Fileset

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  filename: s1-ln13726611052370212-1939656818Hwf1249294382IdV19202246411372661PDF_HI0001-1.pdf
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  size: 3561006
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## Thumbnail

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