# Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride

https://mdr.nims.go.jp/datasets/3d3a00fd-2e84-4481-be37-0595745803e1

## File

- [s41467-021-24019-6.pdf](https://mdr.nims.go.jp/filesets/c495f8d5-31c2-41e9-b414-316424c8daf8/download) ([Detail](https://mdr.nims.go.jp/filesets/c495f8d5-31c2-41e9-b414-316424c8daf8.md))

## Id

3d3a00fd-2e84-4481-be37-0595745803e1

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-26T06:14:22.696311Z

## Updated at

2025-02-27T03:30:29.803896Z

## Published at

2025-02-27T03:30:29.948558Z

## Doi



## First published url

https://doi.org/10.1038/s41467-021-24019-6

## Date published

2021-06-18

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Position-controlled quantum emitters with reproducible emission wavelength
    in hexagonal boron nitride
  title_type: original
  lang: en

## Description

- description: Single photon emitters (SPEs) in low-dimensional layered materials
    have recently gained a large interest owing to the auspicious perspectives of
    integration and extreme miniaturization offered by this class of materials. However,
    accurate control of both the spatial location and the emission wavelength of the
    quantum emitters is essentially lacking to date, thus hindering further technological
    steps towards scalable quantum photonic devices. Here, we demonstrate SPEs in
    high purity synthetic hexagonal boron nitride (hBN) that can be activated by an
    electron beam at chosen locations, with a spatial accuracy better than the cubed
    emission wavelength. Stable and bright single photon emission is subsequently
    observed in the visible range up to room temperature upon non-resonant laser excitation.
    Moreover, the low-temperature emission wavelength is reproducible within a range
    of 5 meV, a statistical dispersion that is two orders of magnitude lower than
    what is usually observed for colour centres in hBN. Our findings constitute an
    essential step towards the realization of top-down integrated devices based on
    identical quantum emitters in 2D materials.
  description_type: abstract
  lang: und

## Creator

- name: Clarisse Fournier
  role: author
- name: Alexandre Plaud
  role: author
- name: Sébastien Roux
  role: author
- name: Aurélie Pierret
  role: author
- name: Michael Rosticher
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Stéphanie Buil
  role: author
- name: Xavier Quélin
  role: author
- name: Julien Barjon
  role: author
- name: Jean-Pierre Hermier
  role: author
- name: Aymeric Delteil
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Single photon emitters
  schema: not_defined
- subject: hexagonal boron nitride
  schema: not_defined
- subject: quantum emitters
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

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## Data origin



## Embargo



## Journal

- title: Nature Communications
  issn: '20411723'
  volume: '12'
  issue: '1'
  article_number: '3779'

## Conference



## Related item



## Funding

- funder_name: Centre National de la Recherche Scientifique

## Instrument



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## Specimen



## Chemical composition



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## Fileset

- id: c495f8d5-31c2-41e9-b414-316424c8daf8
  filename: s41467-021-24019-6.pdf
  content_type: application/pdf
  size: 1383622
  md5: f4ce590ad58edd003d3926a6a7a5af7c

## Thumbnail

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filename: s41467-021-24019-6.pdf