Junxiong Hu
;
Junyou Tan
;
Mohammed M. Al Ezzi
;
Udvas Chattopadhyay
;
Jian Gou
;
Yuntian Zheng
;
Zihao Wang
;
Jiayu Chen
;
Reshmi Thottathil
;
Jiangbo Luo
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Andrew Thye Shen Wee
;
Shaffique Adam
;
A. Ariando
説明:
(abstract)The supermoiré lattice, built by stacking two moiré patterns, provides a platform for creating flat mini-bands and studying electron correlations. An ultimate challenge in assembling a graphene supermoiré lattice is in the deterministic control of its rotational alignment, which is made highly probabilistic due to the random nature of the edge chirality and crystal symmetry of each component layer. In this work, we present an experimental strategy to overcome this challenge and realize the controlled alignment of double-aligned hBN/graphene/hBN supermoiré lattice. Remarkably, we find that the crystallographic edge of neighboring graphite can be used to better guide the stacking alignment, as demonstrated by the controlled production of 20 moiré samples with an accuracy better than ~0.2º. Employing this technique, we are the first to fabricate the perfect double-aligned graphene supermoiré lattice and to observe the sharp resistivity peaks at band filling of 0, -4 and -8 electrons per moiré unit cell. Finally, we extend our technique to other strongly correlated electron systems, such as low-angle twisted bilayer graphene and ABC-stacked trilayer graphene, providing a strategy for flat-band engineering in these moiré materials.
権利情報:
キーワード: Supermoiré lattice, graphene, rotational alignment
刊行年月日: 2023-07-12
出版者: Springer Science and Business Media LLC
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1038/s41467-023-39893-5
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-23 22:48:33 +0900
MDRでの公開時刻: 2025-02-23 22:48:33 +0900
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s41467-023-39893-5.pdf
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サイズ | 3.38MB | 詳細 |