# Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth

https://mdr.nims.go.jp/datasets/39a7c750-a2f0-4e16-a53f-7ebf6393819a

## Files

- [(5)二重ELO-paper_r03.3_最終版(YO-edit).pdf](https://mdr.nims.go.jp/filesets/522ab454-e4ab-44be-9292-5278ffa10a6e/download) ([Detail](https://mdr.nims.go.jp/filesets/522ab454-e4ab-44be-9292-5278ffa10a6e.md))

## Id

39a7c750-a2f0-4e16-a53f-7ebf6393819a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-07T06:12:02.358297Z

## Updated at

2024-01-22T00:40:04.284170Z

## Published at

2024-01-22T03:30:16.526506Z

## Doi

https://doi.org/10.48505/nims.4357

## First published url

https://doi.org/10.35848/1882-0786/ab9fc5

## Date published

2020-07-01

## Recorded date published

2020-7-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: 二重ELOによるα-Ga2O3の貫通転位低減
  title_type: alternative
  lang: ja
- title: Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial
    lateral overgrowth
  title_type: original
  lang: en

## Description

- description: We demonstrated the double layered epitaxial lateral overgrowth (ELO)
    of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prepared on an
    ELO α-Ga2O3, and α-Ga2O3 islands were regrown on the mask windows. The α-Ga2O3
    islands of second ELO grew selectively and coalesced step-by-step due to the nested-structure
    mask pattern. No dislocation was found by TEM not only above the masks but also
    above the windows of second ELO pattern, and the dislocation density was estimated
    to be less than 5 × 10^6 cm-2. We obtained continuous α-Ga2O3 films with a low
    density of dislocations in the entire surface.
  description_type: abstract
  lang: eng

## Creator

- name: Katsuaki Kawara
  role: author
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
- name: Mitsuru Okigawa
  role: author
- name: Takashi Shinohe
  role: author

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: α-Ga2O3
  schema: not_defined
- subject: dislocation
  schema: not_defined
- subject: ELO
  schema: not_defined

## Rights

- description: "© 2020 The Japan Society of Applied Physics<br>\r\nThis is an author-created,
    un-copyedited version of an article accepted for publication/published\r\nin Applied
    Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions
    in this version of the manuscript or\r\nany version derived from it. The Version
    of Record is available online at https://doi.org/10.35848/1882-0786/ab9fc5."
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Applied Physics Express
  issn: '18820778'
  volume: '13'
  issue: '7'
  start_page: 75507
  end_page: 75507

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: 522ab454-e4ab-44be-9292-5278ffa10a6e
  filename: "(5)二重ELO-paper_r03.3_最終版(YO-edit).pdf"
  content_type: application/pdf
  size: 819793
  md5: 1c776e98522544f9c2dfbabd86261fb7

## Thumbnail

fileset_id: 522ab454-e4ab-44be-9292-5278ffa10a6e
filename: "(5)二重ELO-paper_r03.3_最終版(YO-edit).pdf"