Ju-Young Yoon
;
Yutaro Takeuchi
(National Institute for Materials Science)
;
Ryota Takechi
;
Jiahao Han
;
Tomohiro Uchimura
;
Yuta Yamane
;
Shun Kanai
;
Jun’ichi Ieda
;
Hideo Ohno
;
Shunsuke Fukami
説明:
(abstract)Spin-orbit torque (SOT) provides a promising mechanism for electrically encoding information in magnetic states. Unlike existing schemes, where the SOT is passively determined by the material and device structures, an active manipulation of the intrinsic SOT polarity would allow for flexibly programmable SOT devices. Achieving this requires electrical control of the current-induced spin polarization of the spin source. Here we demonstrate a proof-of-concept current-programmed SOT device. Using a noncollinear-antiferromagnetic/nonmagnetic/ferromagnetic Mn3Sn/Mo/CoFeB heterostructure at zero magnetic field, we show current-induced switching in the CoFeB layer due to the spin current polarized by the magnetic structure of the Mn3Sn; by properly tuning the driving current, the spin current from the CoFeB further reverses the magnetic orientation of the Mn3Sn, which determines the polarity of the subsequent switching of the CoFeB. This scheme of mutual
witching can be achieved in a spin-valve-like simple protocol because each magnetic layer serves as a reversible spin source and target magnetic electrode. It yields intriguing proof-of-concept functionalities for unconventional logic and neuromorphic computing.
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キーワード: spintronics, spin-orbit torque, antiferromagnet
刊行年月日: 2025-02-05
出版者: Springer Science and Business Media LLC
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1038/s41467-025-56157-6
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更新時刻: 2025-04-08 13:16:19 +0900
MDRでの公開時刻: 2025-04-07 22:19:36 +0900
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