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Seventeen-carbon-atom-wide armchair graphene nanoribbons (17-AGNRs) are promising candidates for high-performance electronic devices due to their narrow electronic bandgap. Atomic precision in edge structure and width control is achieved through a bottom-up on-surface synthesis (OSS) approach from tailored molecular precursors in ultrahigh vacuum (UHV). This synthetic protocol must be optimized to meet the structural requirements for device integration, with the ribbon length being the most critical parameter. Here, we report optimized OSS conditions that produce 17-AGNRs with an average length of ∼17 nm. This length enhancement is achieved through a gradual temperature ramping during an extended annealing period, combined with a template-like effect driven by monomer assembly at high surface coverage. The resulting 17-AGNRs are comprehensively characterized in UHV by using scanning probe techniques and Raman spectroscopy. Raman measurements following substrate transfer enabled the characterization of GNRs’ length distribution on the device substrate and confirmed their stability under ambient conditions and harsh chemical environments, including acid vapors and etchants. The increased length and ambient stability of the 17-AGNRs led to their reliable integration into device architectures. As a proof of concept, we integrate 17-AGNRs into field-effect transistors (FETs) with graphene electrodes and confirm that electronic transport occurs through the GNRs. This work demonstrates the feasibility of integrating narrow bandgap GNRs into functional devices and contributes to advancing the development of carbon-based nanoelectronics.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © 2025 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsnano.5c11981.

キーワード: on-surface synthesis, graphene nanoribbon, field-effect transistor, nanoelectronics, precursor

刊行年月日: 2025-10-28

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Nano (ISSN: 19360851) vol. 19 issue. 42 p. 37230-37240

研究助成金:

• Werner Siemens-Stiftung
• Rensselaer Polytechnic Institute A21-0125-002
• Rensselaer Polytechnic Institute A50634.2326
• Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung 189924
• Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung 196795
• Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung 200021E-219172/1
• Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung 212875
• Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung PCEFP2 203663
• Japan Society for the Promotion of Science JP20H02816
• Japan Society for the Promotion of Science JP20H05833
• Japan Society for the Promotion of Science JP24K01576
• Japan Society for the Promotion of Science JP25K01751
• Horizon 2020 Framework Programme 101099098
• Horizon 2020 Framework Programme 767187
• Graphene Flagship 881603
• Swiss State Secretariat for Education, Research and Innovation MB22.00076

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6010

公開URL: https://doi.org/10.1021/acsnano.5c11981

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更新時刻: 2026-04-30 12:01:11 +0900

MDRでの公開時刻: 2026-10-17 08:30:47 +0900