# Device engineering for photocurrent detected magnetic resonance and scanning probes using solid-state spin defects

https://mdr.nims.go.jp/datasets/3590d66d-7c0f-4fde-b2e4-60bc484bbcca

## File

- [PDMRReviewVer5.pdf](https://mdr.nims.go.jp/filesets/f9889b09-97a3-46b2-81cb-856495ea36e6/download) ([Detail](https://mdr.nims.go.jp/filesets/f9889b09-97a3-46b2-81cb-856495ea36e6.md))

## Id

3590d66d-7c0f-4fde-b2e4-60bc484bbcca

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-08-24T04:17:09.221070Z

## Updated at

2026-08-24T05:30:47.933746Z

## Published at

2026-08-24T07:27:38.536040Z

## Doi

https://doi.org/10.48505/nims.6474

## First published url

https://doi.org/10.1080/14686996.2026.2691682

## Date published

2026-12-31

## Recorded date published

2026-12-31

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Device engineering for photocurrent detected magnetic resonance and scanning
    probes using solid-state spin defects
  title_type: original
  lang: en

## Description

- description: Solid-state spin defects provide a versatile platform for quantum sensing
    with nanoscale spatial resolution and room-temperature operation. Spin defects
    in diamond have enabled mature scanning-probe devices, while related defects in
    silicon carbide and hexagonal boron nitride are being actively explored for scalable
    sensing platforms. However, the sensitivity of practical and scanning-probe devices
    remains below that of optimized bulk systems. Although optical fluorescence detection
    is widely used, practical performance is often constrained by limitations in signal
    acquisition and readout efficiency, motivating continued efforts to improve readout
    technologies. This review surveys material platforms and optical and photoelectrical
    readout technologies for solid-state spin defects. We compare fluorescence- and
    photoelectric-based detection schemes in terms of readout fidelity, sensitivity,
    and scalability, and discuss how materials properties and carrier transport influence
    practical performance. These perspectives provide guidelines for improving readout
    efficiency and advancing high-sensitivity quantum sensors and scanning probes.
  description_type: abstract
  lang: en

## Creator

- name: Hiroki Morishita
  role: author
  organization: Tohoku University
  department: a Center for Science and Innovation in Spintronics
- name: Naoya Morioka
  role: author
- name: Eikichi Kimura
  role: author
- name: Keigo Arai
  role: author
- name: Yuichi Yamazaki
  role: author
- name: Toshu An
  role: author
- name: Shigemi Mizukami
  role: author
- name: Norikazu Mizuochi
  role: author

## Contact agent



## Publisher

organization: Taylor & Francis

## Managing organization



## Keyword

- subject: Solid-state quantum sensor
  schema: not_defined
- subject: quantum spin
  schema: not_defined
- subject: diamond
  schema: not_defined
- subject: silicon carbide
  schema: not_defined
- subject: photoelectrical detection
  schema: not_defined
- subject: quantum scanning probe
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Science and Technology of Advanced Materials
  issn: '14686996'
  volume: '27'
  issue: '1'
  article_number: '2691682'

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## Fileset

- id: f9889b09-97a3-46b2-81cb-856495ea36e6
  filename: PDMRReviewVer5.pdf
  content_type: application/pdf
  size: 4843473
  md5: 3b8eea741f26632b4e17e27435bd8564

## Thumbnail

fileset_id: f9889b09-97a3-46b2-81cb-856495ea36e6
filename: PDMRReviewVer5.pdf