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代替タイトル: Exciton states in monolayer MoSe2 and MoTe2 probed by upconversion spectroscopy

説明:

We show that encapsulation in hBN results in emission line width of the A:1s exciton below 1.5 meV and 3 meV in MoSe2 and MoTe2 monolayer samples, respectively. This allows us to investigate the excited exciton states by photoluminescence upconversion spectroscopy for both monolayer materials. The excitation laser is tuned into resonance with the A:1s transition and we observe emission of excited exciton states up to 200 meV above the laser energy. We demonstrate bias control of the efficiency of this non-linear optical process. At the origin of upconversion our model calculations suggest an exciton-exciton (Auger) scattering mechanism specific to TMD MLs involving an excited conduction band thus generating high energy excitons with small wave-vectors.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Transition metal dichalcogenides, exciton states, MoSe2

刊行年月日: 2018-09-18

出版者: American Physical Society (APS)

掲載誌:

• PHYSICAL REVIEW X (ISSN: 21603308) vol. 8 issue. 3 031073

研究助成金:

• Agence Nationale de la Recherche
• H2020 Marie Sklodowska-Curie Actions 676108
• Institut Universitaire de France
• Ministry of Education, Culture, Sports, Science and Technology
• Core Research for Evolutional Science and Technology JPMJCR15F3
• Japan Science and Technology Agency
• Russian Foundation for Basic Research 17-02-00383
• Russian Foundation for Basic Research 17-52-16020
• ITN 4PHOTON 721394
• LIA ILNACS
• RF President Grant MD-1555.2017.2
• BASIS Foundation

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1103/PhysRevX.8.031073

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更新時刻: 2025-02-23 22:50:21 +0900

MDRでの公開時刻: 2025-02-23 22:50:21 +0900