# Mg3(Sb,Bi)2-based materials and devices rivaling bismuth telluride for thermoelectric power generation and cooling

https://mdr.nims.go.jp/datasets/34fedfe1-3c0d-4dca-b0b1-1a9e1b28320f

## File

- [MDR-DEVICE-D-24-00006_21MAR24YY-r2.docx](https://mdr.nims.go.jp/filesets/846f4eaf-b3c4-4168-9d84-6f6e13e12993/download) ([Detail](https://mdr.nims.go.jp/filesets/846f4eaf-b3c4-4168-9d84-6f6e13e12993.md))

## Id

34fedfe1-3c0d-4dca-b0b1-1a9e1b28320f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-10-05T11:45:17.781060Z

## Updated at

2024-10-08T07:30:21.368532Z

## Published at

2024-10-08T07:30:21.470036Z

## Doi

https://doi.org/10.48505/nims.4804

## First published url

https://doi.org/10.1016/j.device.2024.100408

## Date published

2024-07-19

## Recorded date published

2024-7

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Mg3(Sb,Bi)2-based materials and devices rivaling bismuth telluride for thermoelectric
    power generation and cooling
  title_type: original
  lang: en

## Description

- description: The world’s target of achieving net-zero emissions necessitates the
    development of sustainable green technology. In addition, the myriad Internet
    of Things (IoT) sensors and devices also require independent electrical power
    sources which can dynamically harvest energy from their surroundings. As one of
    the emerging energy harvesting technologies, solid-state devices based on thermoelectricity
    enable direct conversion between heat and electricity. Bismuth telluride-based
    compounds have reigned as the long-time champion thermoelectric (TE) materials
    and devices. However, the use of scarce Te has impeded the growth of this technology.
    Therefore, much attention has been paid to explore environmentally abundant TE
    materials with high performance. Recently, Mg3(Sb,Bi)2-based materials have demonstrated
    a potential for rivaling the traditional champion TE materials because of their
    high TE figure of merit over unity in the broad temperature range of 300-773 K.
    This review focuses on a complete perspective that involves material development
    and extends to TE device parameters. It provides insight into relevant crystal
    structures, electronic band structures, TE performance, and recently implemented
    innovative strategies like interstitial doping and grain boundary engineering
    of Mg3(Sb,Bi)2-based materials. Furthermore, it makes a comprehensive review of
    TE device parameters, including effective contact layer/diffusion barrier development,
    geometrical optimization, and fabrication technology. Finally, importantly, this
    review highlights key factors, challenges, and possible strategies that can be
    useful in boosting this emerging TE energy harvesting technology toward applications.
  description_type: abstract
  lang: und

## Creator

- name: Sahiba Bano
  role: author
  orcid: https://orcid.org/0009-0002-9154-657X
  organization: National Institute for Materials Science
- name: Raju Chetty
  role: author
  orcid: https://orcid.org/0000-0003-1072-8241
  organization: National Institute for Materials Science
- name: Jayachandran Babu
  role: author
  orcid: https://orcid.org/0000-0002-1182-6655
  organization: National Institute for Materials Science
- name: Takao Mori
  role: author
  orcid: https://orcid.org/0000-0003-2682-1846
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: thermoelectric
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Device
  issn: '26669986'
  volume: '2'
  issue: '7'
  article_number: '100408'

## Conference



## Related item



## Funding

- funder_name: Japan Science and Technology Agency
- identifier: JPMJMI19A1
  funder_name: JST-Mirai Program

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

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  filename: MDR-DEVICE-D-24-00006_21MAR24YY-r2.docx
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  size: 6833081
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## Thumbnail

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filename: MDR-DEVICE-D-24-00006_21MAR24YY-r2.docx