# Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows

https://mdr.nims.go.jp/datasets/333fbabe-ac81-4ed4-922a-42f026cc7909

## File

- [EB_alpha-GO_240422-2HQ(clean).pdf](https://mdr.nims.go.jp/filesets/c5dd5740-8f28-4a8e-a6c0-187fca0013ef/download) ([Detail](https://mdr.nims.go.jp/filesets/c5dd5740-8f28-4a8e-a6c0-187fca0013ef.md))

## Id

333fbabe-ac81-4ed4-922a-42f026cc7909

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-05-21T00:04:54.884548Z

## Updated at

2025-05-21T07:30:09.767848Z

## Published at

2025-05-21T07:28:50.913521Z

## Doi

https://doi.org/10.48505/nims.5489

## First published url

https://doi.org/10.1063/5.0269810

## Date published

2025-05-19

## Recorded date published

2025-5-19

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with
    ultra-narrow windows
  title_type: original
  lang: en

## Description

- description: We demonstrated the epitaxial lateral overgrowth of α-Ga2O3 by halide
    vapor phase epitaxy using a stripe mask with an ultra-narrow window width of 50-750
    nm fabricated by electron-beam lithography. α-Ga2O3 stripes formed only on the
    windows without unintentional nucleation on the mask even on the mask with the
    narrowest window. Etch pit observation and cross-sectional TEM revealed that the
    propagation of dislocation into regrown α-Ga2O3 was dramatically reduced by narrowing
    the window. The overall dislocation density in the coalesced film including window
    region and coalesced boundaries was as low as 4x107 cm-2 in the case of the 50-nm-window
    mask.
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
- name: Takashi Shinohe
  role: author
  organization: FLOSFIA INC.

## Contact agent



## Publisher

organization: American Institute of Physics

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: dislocation
  schema: not_defined
- subject: HVPE
  schema: not_defined
- subject: ELO
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Yuichi Oshima, Takashi Shinohe; Epitaxial lateral overgrowth of c-plane α-Ga2O3
    using a stripe mask with ultra-narrow windows. Appl. Phys. Lett. 19 May 2025;
    126 (20): 202104 and may be found at https://doi.org/10.1063/5.0269810.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '126'
  issue: '20'
  article_number: '202104'

## Conference



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## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: c5dd5740-8f28-4a8e-a6c0-187fca0013ef
  filename: EB_alpha-GO_240422-2HQ(clean).pdf
  content_type: application/pdf
  size: 496261
  md5: 3dec7b86f7fb5141d76047a993b0b8b2

## Thumbnail

fileset_id: c5dd5740-8f28-4a8e-a6c0-187fca0013ef
filename: EB_alpha-GO_240422-2HQ(clean).pdf