# Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene

https://mdr.nims.go.jp/datasets/32c1d40c-8cfa-4b45-81e0-d01fe42f632c

## File

- [2025A00618G_revised combined - changes not highlighted.pdf](https://mdr.nims.go.jp/filesets/4b9f054d-196e-44e1-9002-d728c1a34af3/download) ([Detail](https://mdr.nims.go.jp/filesets/4b9f054d-196e-44e1-9002-d728c1a34af3.md))

## Id

32c1d40c-8cfa-4b45-81e0-d01fe42f632c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-27T23:23:53.667996Z

## Updated at

2026-07-28T07:30:43.472375Z

## Published at

2026-07-28T09:26:53.240455Z

## Doi



## First published url

https://doi.org/10.1021/acs.nanolett.4c06492

## Date published

2025-04-23

## Recorded date published

2025-4-23

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene
  title_type: original
  lang: en

## Description

- description: Twisted bilayer graphene (tBLG) near the magic angle is a unique platform
    where the combination of topology and strong correlations gives rise to exotic
    electronic phases. These phases are gate-tunable and related to the presence of
    flat electronic bands, isolated by single-particle band gaps. This enables gate-controlled
    charge confinements, essential for the operation of single-electron transistors
    (SETs), and allows one to explore the interplay of confinement, electron interactions,
    band renormalization, and the moiré superlattice, potentially revealing key paradigms
    of strong correlations. Here, we present gate-defined SETs in tBLG with well-tunable
    Coulomb blockade resonances. These SETs allow us to study magnetic field-induced
    quantum oscillations in the density of states of the source-drain reservoirs,
    providing insight into gate-tunable Fermi surfaces of tBLG. Comparison with tight-binding
    calculations highlights the importance of displacement-field-induced band renormalization
    crucial for future advanced gate-tunable quantum devices and circuits in tBLG
    including, e.g., quantum dots and Josephson junction arrays.
  description_type: abstract
  lang: en

## Creator

- name: Alexander Rothstein
  role: author
- name: Ammon Fischer
  role: author
- name: Anthony Achtermann
  role: author
- name: Eike Icking
  role: author
- name: Katrin Hecker
  role: author
- name: Luca Banszerus
  role: author
- name: Martin Otto
  role: author
- name: Stefan Trellenkamp
  role: author
- name: Florian Lentz
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Bernd Beschoten
  role: author
- name: Robin J. Dolleman
  role: author
- name: Dante M. Kennes
  role: author
- name: Christoph Stampfer
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Twisted bilayer graphene
  schema: not_defined
- subject: Single-electron transistor
  schema: not_defined
- subject: Coulomb blockade
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in Nano Letters, copyright © 2025 American Chemical
    Society after peer review and technical editing by the publisher. To access the
    final edited and published work see https://doi.org/10.1021/acs.nanolett.4c06492
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-04-14
end_date: 2026-04-14

## Journal

- title: Nano Letters
  issn: '15306984'
  volume: '25'
  issue: '16'
  start_page: 6429
  end_page: 6437

## Conference



## Related item



## Funding

- identifier: '820254'
  funder_name: European Research Council
- funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: '437214324'
  funder_name: Ministero dell?Istruzione, dell?Universit? e della Ricerca
- identifier: '437214324'
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: '471733165'
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: '534269806'
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: EXC 2004/1 - 390534769
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: SPP 2244 535377524
  funder_name: Deutsche Forschungsgemeinschaft
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science
- funder_name: Helmholtz Nano Facility

## Instrument



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## Chemical composition



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## Fileset

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  filename: 2025A00618G_revised combined - changes not highlighted.pdf
  content_type: application/pdf
  size: 7827935
  md5: 3f515d6cb7339785c9420bba66b1c676

## Thumbnail

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filename: 2025A00618G_revised combined - changes not highlighted.pdf