# Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ Er<sub>2</sub>O<sub>3</sub> Dielectrics on Two-Dimensional MoS<sub>2</sub> Field-Effect Transistors

https://mdr.nims.go.jp/datasets/32974794-8f6d-4a4c-a1a1-3006a4f1bd7d

## File

- [2025A00686G_ACS materials letters.pdf](https://mdr.nims.go.jp/filesets/d6d2a0db-5f65-4642-8522-33b3b4f56924/download) ([Detail](https://mdr.nims.go.jp/filesets/d6d2a0db-5f65-4642-8522-33b3b4f56924.md))

## Id

32974794-8f6d-4a4c-a1a1-3006a4f1bd7d

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-27T23:15:49.144573Z

## Updated at

2026-07-29T02:45:27.689048Z

## Published at

2026-07-29T05:28:30.342891Z

## Doi



## First published url

https://doi.org/10.1021/acsmaterialslett.5c00291

## Date published

2025-05-05

## Recorded date published

2025-5-5

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ
    Er<sub>2</sub>O<sub>3</sub> Dielectrics on Two-Dimensional MoS<sub>2</sub> Field-Effect
    Transistors
  title_type: original
  lang: en

## Description

- description: 'The integration of high-κ films with two-dimensional (2D) semiconductors
    offers a pathway to advance metal-oxide-semiconductor technology scaling. While
    reliability studies on gate stacks with 2D semiconductors have focused on device
    performance instabilities, the stability of bulk dielectric properties, particularly
    for ultrathin high-κ films on 2D semiconductors, remains underexplored. This work
    demonstrates the scalability of high-κ Er2O3 on mechanically transferred MoS2,
    achieving an equivalent oxide thickness below 1 nm. However, the critical issue
    is identified: time-dependent degradation of the dielectric constant, which persists
    despite various passivation methods. Notably, this instability is absent when
    the high-κ film is deposited on a clean surface of MoS2 grown on a sapphire substrate,
    revealing that the degradation originates from suboptimal surface conditions of
    the 2D semiconductor rather than the dielectric itself. These findings highlight
    the necessity of addressing 2D material surface effects to fully realize the potential
    of ultrathin high-κ dielectrics in future device applications.'
  description_type: abstract
  lang: en

## Creator

- name: Shuhong Li
  role: author
- name: Ryotaro Otake
  role: author
- name: Tomonori Nishimura
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Yoshiki Sakuma
  role: author
  orcid: https://orcid.org/0000-0001-6804-7217
  organization: National Institute for Materials Science
- name: Kosuke Nagashio
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: High-κ dielectric
  schema: not_defined
- subject: MoS2
  schema: not_defined
- subject: 2D semiconductor
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Article
    that appeared in final form in ACS Materials Letters, copyright © 2025 American
    Chemical Society. To access the final published article, see https://doi.org/10.1021/acsmaterialslett.5c00291.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-04-23
end_date: 2026-04-23

## Journal

- title: ACS Materials Letters
  issn: '26394979'
  volume: '7'
  issue: '5'
  start_page: 1993
  end_page: 2001

## Conference



## Related item



## Funding

- identifier: JPMJMI22708192
  funder_name: JST-Mirai Program
- identifier: JPMXP09F23UT1041
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMJCR24A3
  funder_name: Core Research for Evolutional Science and Technology
- identifier: JP21H05232
  funder_name: Japan Society for the Promotion of Science
- identifier: JP21H05236
  funder_name: Japan Society for the Promotion of Science
- identifier: JP21H05237
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22H04957
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22K04212
  funder_name: Japan Society for the Promotion of Science
- identifier: JP23K23243
  funder_name: Japan Society for the Promotion of Science
- identifier: JP23K26745
  funder_name: Japan Society for the Promotion of Science
- identifier: '05901'
  funder_name: National Institute of Information and Communications Technology

## Instrument



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## Fileset

- id: d6d2a0db-5f65-4642-8522-33b3b4f56924
  filename: 2025A00686G_ACS materials letters.pdf
  content_type: application/pdf
  size: 3133460
  md5: 39742934d6500e0d3abd5a44702314a0

## Thumbnail

fileset_id: d6d2a0db-5f65-4642-8522-33b3b4f56924
filename: 2025A00686G_ACS materials letters.pdf