# Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination

https://mdr.nims.go.jp/datasets/30d56e77-05bd-41b2-9cf7-f2c18f504039

## File

- [paper.pdf](https://mdr.nims.go.jp/filesets/7f724bbe-8949-435c-99a3-77f2816bc78a/download) ([Detail](https://mdr.nims.go.jp/filesets/7f724bbe-8949-435c-99a3-77f2816bc78a.md))

## Id

30d56e77-05bd-41b2-9cf7-f2c18f504039

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-08-01T23:29:54.890964Z

## Updated at

2024-08-02T03:30:52.469535Z

## Published at

2024-08-02T03:30:52.534030Z

## Doi



## First published url

https://doi.org/10.35848/1882-0786/ad64ba

## Date published

2024-08-01

## Recorded date published

2024-8-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched
    AlInN layer for a positive beveled edge termination
  title_type: original
  lang: en

## Description

- description: 'GaN mesas were fabricated by sequential dry and wet etching of a +c-oriented
    GaN layer onto a lattice-matched AlInN layer for future applications of positive
    beveled edge termination, which is desirable for preventing premature breakdown
    of power devices. The dry etching produced hexagonal AlInN/GaN mesas surrounded
    by m-plane sidewalls with six protrusions at the vertices. The subsequent hot
    phosphoric acid etching selectively etched the AlInN layer to expose and etch
    the chemically unstable −c surface of the GaN layer, which formed reverse-tapered
    {10-1-2} facets. The protrusions were sacrificed during the wet etching to prevent
    undesirable positive tapering at the vertices. '
  description_type: abstract
  lang: eng

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
  ror: https://ror.org/026v1ze26
- name: Masataka Imura
  role: author
  orcid: https://orcid.org/0000-0002-4236-9549
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Next-generation Semiconductor Group
  ror: https://ror.org/026v1ze26
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: Japan Society of Applied Physics

## Managing organization



## Keyword

- subject: GaN
  schema: not_defined
- subject: AlInN
  schema: not_defined
- subject: etching
  schema: not_defined
- subject: positive bevel edge termination
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Express
  issn: '18820778'
  volume: '17'
  issue: '8'
  article_number: '086501'

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: 7f724bbe-8949-435c-99a3-77f2816bc78a
  filename: paper.pdf
  content_type: application/pdf
  size: 2480631
  md5: 5f089b8d5e30def935ec2ca37313cbc7

## Thumbnail

fileset_id: 7f724bbe-8949-435c-99a3-77f2816bc78a
filename: paper.pdf