# Influence of thin MOCVD-grown GaN layer on underlying AlN template

https://mdr.nims.go.jp/datasets/2f5c7172-eebd-45ee-bf00-3045dd16da5c

## File

- [GaN on AlN template_manusript06_Finalized.docx](https://mdr.nims.go.jp/filesets/bb6dcbe3-2ac0-47fd-8360-39819f9d3c8d/download) ([Detail](https://mdr.nims.go.jp/filesets/bb6dcbe3-2ac0-47fd-8360-39819f9d3c8d.md))

## Id

2f5c7172-eebd-45ee-bf00-3045dd16da5c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-11-25T07:50:54.542279Z

## Updated at

2024-12-10T07:56:42.992966Z

## Published at

2024-12-10T07:56:43.092987Z

## Doi

https://doi.org/10.48505/nims.5134

## First published url

https://doi.org/10.1016/j.jcrysgro.2019.125376

## Date published

2019-11-27

## Recorded date published

2020-2

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Influence of thin MOCVD-grown GaN layer on underlying AlN template
  title_type: original
  lang: en

## Description

- description: We have studied the direct growth of GaN film on AlN template /sapphire
    substrate by using metalorganic chemical vapor deposition. It is found that GaN
    growing layer causes the deformation of the under-layer of AlN template drastically
    at the initial growth. The intensity of x-ray diffraction from AlN drops by a
    factor of 5, and the values of full-width at half maximum of rocking curve of
    on- and off-axis planes are increased from 50 to 300 arcsec. With increase of
    GaN growth time, these values are gradually recovered, and crystalline quality
    of GaN film is improved. No alloying formation is observed at the interface AlN
    and GaN. AlN template on sapphire substrate seems to work just like a buffer layer,
    adjusting the lattice constant to improve the quality of direct GaN growth. Compared
    to GaN film grown on sapphire substrate, GaN grown directly on AlN temp forms
    smoother surface and better crystalline quality for shorter growth time at lower
    temperature, exhibiting the lower non-radiative defects in the band gap.
  description_type: abstract
  lang: und

## Creator

- name: Masatomo Sumiya
  role: author
  orcid: https://orcid.org/0000-0003-0960-3812
  organization: National Institute for Materials Science
- name: Kiyotaka Fukuda
  role: author
  organization: National Institute for Materials Science
- name: Shuhei Yasiro
  role: author
- name: Tohru Honda
  role: author

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: GaN film growth
  schema: not_defined
- subject: AlN template
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Journal of Crystal Growth
  issn: '00220248'
  volume: '532'
  article_number: '125376'

## Conference



## Related item



## Funding

- identifier: 16H06424
  funder_name: JSPS KAKENHI

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: bb6dcbe3-2ac0-47fd-8360-39819f9d3c8d
  filename: GaN on AlN template_manusript06_Finalized.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 1277232
  md5: 3d39c6d2dafc4a6a8d65d825abdd198e

## Thumbnail

fileset_id: bb6dcbe3-2ac0-47fd-8360-39819f9d3c8d
filename: GaN on AlN template_manusript06_Finalized.docx