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説明:

Twisted bilayer graphene (tBG) is an exuberant electronic system, exhibiting a wide variety of electronic behaviors intricately influenced by both the twist angle and internal built-in strain. In our study, we explore how naturally occurring variations in the mismatch angle in bilayer graphene result in localized strain gradients. These gradients are sufficient to store elastic energy, promoting deterministic buckling phenomena. Utilizing tip-enhanced Raman spectroscopy, we conducted nanometer-scale mapping of twist angle, strain distribution, and elastic energy across tBG, identifying pronounced and deterministic fluctuations in Raman peak shifts, particularly within the 2D band on wrinkled areas. This analysis enabled us to distinguish between uniaxial and biaxial strain effects and to evaluate the elastic energy that remains within these structures. Supported by finite element modeling, our results elucidate the relationship between anisotropic strain dynamics and buckling behavior, enhancing our understanding of tBG’s mechanical properties. Our findings contribute to the field of strain engineering in tBG and suggest new possibilities for tailoring the electronic and structural characteristics of these materials at the nanoscale.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: twisted bilayer graphene (tBG)
, anisotropic strain
, nano-Raman spectroscopy


刊行年月日: 2025-04-17

出版者: American Chemical Society (ACS)

掲載誌:

• The Journal of Physical Chemistry C (ISSN: 19327447) vol. 129 issue. 15 p. 7508-7519

研究助成金:

• Instituto Nacional de Ci?ncia e Tecnologia em Nanomateriais de Carbono
• Funda??o de Amparo ? Pesquisa do Estado de Minas Gerais
• Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico
• Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.jpcc.5c00506

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更新時刻: 2026-02-16 16:30:33 +0900

MDRでの公開時刻: 2026-02-16 13:57:30 +0900