# Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions

https://mdr.nims.go.jp/datasets/2d777b40-96cc-4e3f-8f27-65b6cb1195dd

## File

- [s41598-024-56455-x.pdf](https://mdr.nims.go.jp/filesets/311b794a-118c-4b6f-a3a4-73b554f5a991/download) ([Detail](https://mdr.nims.go.jp/filesets/311b794a-118c-4b6f-a3a4-73b554f5a991.md))

## Id

2d777b40-96cc-4e3f-8f27-65b6cb1195dd

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-18T00:40:48.187868Z

## Updated at

2025-03-03T07:30:33.962297Z

## Published at

2025-03-03T07:30:34.077079Z

## Doi



## First published url

https://doi.org/10.1038/s41598-024-56455-x

## Date published

2024-03-09

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions
  title_type: original
  lang: en

## Description

- description: Vertical stacking of different two-dimensional (2D) materials into
    van der Waals heterostructures exploits the properties of individual materials
    as well as their interlayer coupling, thereby exhibiting unique electrical and
    optical properties. Here, we study and investigate a system consisting entirely
    of different 2D materials for the implementation of electronic devices that are
    based on quantum mechanical band-to-band tunneling transport such as tunnel diodes
    and tunnel field-effect transistors. We fabricated and characterized van der Waals
    heterojunctions based on semiconducting layers of WSe2 and MoS2 by employing different
    gate configurations to analyze the transport properties of the junction. We found
    that the device dielectric environment is crucial for achieving tunneling transport
    across the heterojunction by replacing thick oxide dielectrics with thin layers
    of hexagonal boronnitride. With the help of additional top gates implemented in
    different regions of our heterojunction device, it was seen that the tunneling
    properties as well the Schottky barriers at the contact interfaces could be tuned
    efficiently by using layers of graphene as an intermediate contact material.
  description_type: abstract
  lang: und

## Creator

- name: Phanish Chava
  role: author
- name: Vaishnavi Kateel
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Manfred Helm
  role: author
- name: Thomas Mikolajick
  role: author
- name: Artur Erbe
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Van der Waals heterostructures
  schema: not_defined
- subject: quantum tunneling
  schema: not_defined
- subject: tunnel diodes
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Scientific Reports
  issn: '20452322'
  volume: '14'
  issue: '1'
  article_number: '5813'

## Conference



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## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Specific property for specimen



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## Computational method



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## Custom property



## Fileset

- id: 311b794a-118c-4b6f-a3a4-73b554f5a991
  filename: s41598-024-56455-x.pdf
  content_type: application/pdf
  size: 5142683
  md5: af5e0f761bbe89564f38d30619f8284c

## Thumbnail

fileset_id: 311b794a-118c-4b6f-a3a4-73b554f5a991
filename: s41598-024-56455-x.pdf