# Asymmetric photoelectric effect: Auger-assisted hot hole photocurrents in transition metal dichalcogenides

https://mdr.nims.go.jp/datasets/2cfea359-7b62-4415-b589-00586b6de019

## File

- [[21928614 - Nanophotonics] Asymmetric photoelectric effect Auger-assisted hot hole photocurrents in transition metal dichalcogenides.pdf](https://mdr.nims.go.jp/filesets/b97c50c1-ab85-472b-b5e4-40206911fed8/download) ([Detail](https://mdr.nims.go.jp/filesets/b97c50c1-ab85-472b-b5e4-40206911fed8.md))

## Id

2cfea359-7b62-4415-b589-00586b6de019

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-25T08:10:17.984345Z

## Updated at

2025-02-26T03:31:17.474578Z

## Published at

2025-02-26T03:31:17.575153Z

## Doi



## First published url

https://doi.org/10.1515/nanoph-2020-0397

## Date published

2020-12-04

## Recorded date published

2020-12-4

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: 'Asymmetric photoelectric effect: Auger-assisted hot hole photocurrents in
    transition metal dichalcogenides'
  title_type: original
  lang: en

## Description

- description: Transition metal dichalcogenide (TMD) semiconductor heterostructures
    are actively explored as a new platform for quantum optoelectronic systems. Most
    state of the art devices make use of insulating hexagonal boron nitride (hBN)
    that acts as a wide-bandgap dielectric encapsulating layer that also provides
    an atomically smooth and clean interface that is paramount for proper device operation.
    We report the observation of large, through-hBN photocurrents that are generated
    upon optical excitation of hBN encapsulated MoSe2 and WSe2 monolayer devices.
    We attribute these effects to Auger recombination in the TMDs, in combination
    with an asymmetric band offset between the TMD and the hBN. We present experimental
    investigation of these effects and compare our observations with detailed, ab-initio
    modeling. Our observations have important implications for the design of optoelectronic
    devices based on encapsulated TMD devices. In systems where precise charge-state
    control is desired, the out-of-plane current path presents both a challenge and
    an opportunity for optical doping control. Since the current directly depends
    on Auger recombination, it can act as a local, direct probe of both the efficiency
    of the Auger process as well as its dependence on the local density of states
    in integrated devices.
  description_type: abstract
  lang: und

## Creator

- name: Andrey Sushko
  role: author
- name: Kristiaan De Greve
  role: author
- name: Madeleine Phillips
  role: author
- name: Bernhard Urbaszek
  role: author
- name: Andrew Y. Joe
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Alexander L. Efros
  role: author
- name: C. Stephen Hellberg
  role: author
- name: Hongkun Park
  role: author
- name: Philip Kim
  role: author
- name: Mikhail D. Lukin
  role: author

## Contact agent



## Publisher

organization: Walter de Gruyter GmbH

## Managing organization



## Keyword

- subject: Transition metal dichalcogenides
  schema: not_defined
- subject: heterostructures
  schema: not_defined
- subject: photocurrents
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Nanophotonics
  issn: '21928614'
  volume: '10'
  issue: '1'
  start_page: 105
  end_page: 113

## Conference



## Related item



## Funding

- identifier: JP20H00354
  funder_name: Japan Society for the Promotion of Science London
- identifier: N00014-15-1-2846N00014-16-1-2825N00014-18-1-2877
  funder_name: DoD Vannevar Bush Faculty Fellowship
- identifier: PHY-1506284
  funder_name: National Science Foundation
- identifier: NRLDC04123333
  funder_name: DoD High Performance Computing Modernization Program
- identifier: JPMXP0112101001
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMJCR15F3
  funder_name: Core Research for Evolutional Science and Technology
- identifier: FA9550-17-1-0002
  funder_name: Air Force Office of Scientific Research

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Fileset

- id: b97c50c1-ab85-472b-b5e4-40206911fed8
  filename: "[21928614 - Nanophotonics] Asymmetric photoelectric effect Auger-assisted
    hot hole photocurrents in transition metal dichalcogenides.pdf"
  content_type: application/pdf
  size: 1541899
  md5: eda9de76043cbcb8bdcae31006f0ec2c

## Thumbnail

fileset_id: b97c50c1-ab85-472b-b5e4-40206911fed8
filename: "[21928614 - Nanophotonics] Asymmetric photoelectric effect Auger-assisted
  hot hole photocurrents in transition metal dichalcogenides.pdf"