# Hot Electron Engineering in Layered Heterojunctions for Efficient Infrared Detection

https://mdr.nims.go.jp/datasets/2c3ef0e5-9403-4d19-811e-50adf4ed69f1

## File

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## Id

2c3ef0e5-9403-4d19-811e-50adf4ed69f1

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-01T07:44:27.912440Z

## Updated at

2026-07-06T00:28:20.078878Z

## Published at

2026-07-06T01:29:08.094343Z

## Doi



## First published url

https://doi.org/10.1021/acsnano.4c14983

## Date published

2025-04-15

## Recorded date published

2025-4-15

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Hot Electron Engineering in Layered Heterojunctions for Efficient Infrared
    Detection
  title_type: original
  lang: en

## Description

- description: Although infrared detection is of high technological and strategic
    importance, the narrow-bandgap materials used for infrared detection often suffer
    from poor air stability and pose environmental hazards. Hot electron-based detectors
    avoid such issues by using conventional wide bandgap semiconductors and exploiting
    intraband transition. However, hot electron infrared detectors usually suffer
    from poor quantum efficiency. By photoexciting MoS2 conduction electrons over
    a thin barrier layer, here we show that a reversal of the role of the emitter
    and collector results in a >1000-fold enhancement in the photoresponse compared
    with a conventional metal/2D semiconductor Schottky diode. We reveal that electron–electron
    scattering plays a key role in the device performance, which can be effectively
    tuned by a gate voltage. The photodetector exhibits a nearly flat response up
    to a measurement wavelength of 1800 nm with a responsivity of 42 mA/W (@1550 nm)
    at room temperature. We demonstrate an operating frequency of 30 kHz @1550 nm
    excitation (100 kHz @633 nm). The detector chip is integrated with post-processing
    electronics in a printed circuit board, making it readily useable for system-level
    applications─a demonstration of heterogeneous integration of 2D materials with
    conventional electronics.
  description_type: abstract
  lang: en

## Creator

- name: Pushkar Dasika
  role: author
- name: Patrick Hays
  role: author
- name: Suchithra Puliyassery
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Seth Ariel Tongay
  role: author
- name: Kausik Majumdar
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Hot electron infrared detector
  schema: not_defined
- subject: MoS2
  schema: not_defined
- subject: Schottky diode
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Article
    that appeared in final form in ACS Nano, copyright © 2025 American Chemical Society.
    To access the final published article, see https://doi.org/10.1021/acsnano.4c14983.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-03-31
end_date: 2026-03-31

## Journal

- title: ACS Nano
  issn: 1936086X
  volume: '19'
  issue: '14'
  start_page: 13752
  end_page: 13759

## Conference



## Related item



## Funding

- funder_name: Science and Engineering Research Board
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science
- funder_name: Indian Institute of Science Education and Research Pune
- funder_name: British Telecom India Research Centre
- funder_name: I-Hub Quantum Technology Foundation
- funder_name: Karnataka Innovation and Technology Society
- funder_name: Indian Space Research Organization

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Fileset

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## Thumbnail

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filename: 2025A00601G_HotElectronEngineering_Main.pdf