# Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM

https://mdr.nims.go.jp/datasets/2c3884a5-3f26-4d78-9d44-5a6792738065

## Files

- [draft01.pdf](https://mdr.nims.go.jp/filesets/1818f2b2-e3e9-4905-9032-ac0073777383/download) ([Detail](https://mdr.nims.go.jp/filesets/1818f2b2-e3e9-4905-9032-ac0073777383.md))
- [s-info1.pdf](https://mdr.nims.go.jp/filesets/e40be11d-ee13-4639-878f-07bd80afdbac/download) ([Detail](https://mdr.nims.go.jp/filesets/e40be11d-ee13-4639-878f-07bd80afdbac.md))

## Id

2c3884a5-3f26-4d78-9d44-5a6792738065

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-04-02T05:08:04.650218Z

## Updated at

2024-04-03T23:30:11.542867Z

## Published at

2024-04-03T23:30:11.878750Z

## Doi

https://doi.org/10.48505/nims.4463

## First published url

https://doi.org/10.1088/1361-6528/ad0b5e

## Date published

2024-02-05

## Recorded date published

2024-2-5

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Quantitative characterization of built-in potential profile across GaAs p–n
    junctions using Kelvin probe force microscopy with qPlus sensor AFM
  title_type: original
  lang: en

## Description

- description: The electrostatic potential distribution in materials and devices plays
    an important role in controlling the behaviors of charge carriers. Kelvin probe
    force microscopy (KPFM) is a powerful technique for measuring the surface potential
    at a high spatial resolution. However, the measured surface potential often deviates
    from the potential deep in the bulk owing to certain factors. Here, we performed
    KPFM measurements across the p-n junction, in which such factors were eliminated
    as much as possible by selecting the sample, force sensor, and measurement mode.
    The measured surface potential distribution agrees well with the line shape of
    the simulated bulk potential. Our results demonstrate that KPFM is capable of
    quantitatively characterizing potential distributions whose changes occur on the
    order of 10 nm.
  description_type: abstract
  lang: und

## Creator

- name: Nobuyuki Ishida
  role: author
  orcid: https://orcid.org/0000-0003-0161-0583
  organization: National Institute for Materials Science
- name: Takaaki Mano
  role: author
  orcid: https://orcid.org/0000-0002-6955-260X
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: GaAs(110)
  schema: not_defined
- subject: Kelvin probe force microscopy
  schema: not_defined
- subject: p-n junction
  schema: not_defined
- subject: qPlus sensor
  schema: not_defined

## Rights

- description: This is the version of the article before peer review or editing, as
    submitted by an author to Nanotechnology .  IOP Publishing Ltd is not responsible
    for any errors or omissions in this version of the manuscript or any version derived
    from it.  The Version of Record is available online at https://doi.org/10.1088/1361-6528/ad0b5e.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Nanotechnology
  issn: '13616528'
  volume: '35'
  issue: '6'
  article_number: '065708'

## Conference



## Related item



## Funding

- identifier: JSPS KAKENHI Grant Numbers JP17K06366
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 1818f2b2-e3e9-4905-9032-ac0073777383
  filename: draft01.pdf
  content_type: application/pdf
  size: 1766864
  md5: a9c54f4c694ca00d0a055cca4fa825a5
- id: e40be11d-ee13-4639-878f-07bd80afdbac
  filename: s-info1.pdf
  content_type: application/pdf
  size: 201263
  md5: b47b1381cc3437a50a0f18af6b6d7719

## Thumbnail

fileset_id: 1818f2b2-e3e9-4905-9032-ac0073777383
filename: draft01.pdf