# Spin–Orbit Torque Modulated by Interface Chemistry in Topological BiSb/NiFe Bilayers with Titanium Insertion

https://mdr.nims.go.jp/datasets/2bcc425e-20a8-47bf-94eb-122e3a4c5aa7

## File

- [BiSb draft 2024-0514.pdf](https://mdr.nims.go.jp/filesets/1fc90cea-0fa6-4180-8cad-92ff262cc9f0/download) ([Detail](https://mdr.nims.go.jp/filesets/1fc90cea-0fa6-4180-8cad-92ff262cc9f0.md))

## Id

2bcc425e-20a8-47bf-94eb-122e3a4c5aa7

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-07-02T05:21:34.537411Z

## Updated at

2025-05-27T23:30:08.682215Z

## Published at

2025-05-27T23:19:38.539359Z

## Doi

https://doi.org/10.48505/nims.4573

## First published url

https://doi.org/10.1021/acsaelm.4c00357

## Date published

2024-06-25

## Recorded date published

2024-6-25

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Spin–Orbit Torque Modulated by Interface Chemistry in Topological BiSb/NiFe
    Bilayers with Titanium Insertion
  title_type: original
  lang: en

## Description

- description: Topological insulators are intriguing materials in the field of spintronics
    because they exhibit unique electronic properties that hold great promise for
    device applications. BiSb has attracted more research interest among topological
    materials due to its remarkably high spin-orbit torque (SOT) efficiency. However,
    due to the low melting point of the alloy, high diffusivities of Bi/Sb tend to
    degrade the SOT efficiency with temperature and aging. In this work, we utilize
    interfacial chemistry driven by a titanium (Ti) spacer between BiSb/NiFe bilayers
    to improve the SOT efficiency. We investigated the effect of the Ti insertion
    layer on the SOT efficiency in as-deposited, room-temperature aging, and annealing
    conditions. The SOT efficiency, estimated from the spin-torque ferromagnetic resonance
    response, revealed that the samples with the Ti layer had shown a multi-fold increase
    in the SOT efficiency compared to those without Ti insertion. Atomic resolution
    microstructural analyses provided a clear understanding of the interfacial chemistry
    where the Ti successfully hindered the interdiffusion of Ni and Sb. The interfacial
    chemistry in the vicinity of Ti contributed significantly to the improvement of
    the SOT efficiency. These results highlight the importance of the Ti insertion
    layer in the BiSb-based topological material/ferromagnet bilayer systems for SOT
    applications in spintronics.
  description_type: abstract
  lang: und

## Creator

- name: Talluri Manoj
  role: author
- name: Zhenchao Wen
  role: author
  orcid: https://orcid.org/0000-0001-7496-1339
- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
- name: Hiroaki Sukegawa
  role: author
  orcid: https://orcid.org/0000-0002-4034-7848
- name: Chandrasekhar Murapaka
  role: author
  orcid: https://orcid.org/0000-0002-0283-7037
- name: Brian York
  role: author
- name: Xiaoyong Liu
  role: author
- name: Quang Le
  role: author
- name: Seiji Mitani
  role: author
  orcid: https://orcid.org/0000-0002-1348-0774

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: BiSb
  schema: not_defined
- subject: interface chemistry
  schema: not_defined
- subject: spin−orbit torque efficiency
  schema: not_defined
- subject: Ti insertion
  schema: not_defined
- subject: topological insulator
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in ACS Applied Electronic Materials, copyright © American
    Chemical Society after peer review and technical editing by the publisher. To
    access the final edited and published work see https://doi.org/10.1021/acsaelm.4c00357
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-05-28
end_date: 2025-05-28

## Journal

- title: ACS Applied Electronic Materials
  issn: '26376113'
  volume: '6'
  issue: '6'
  start_page: 4269
  end_page: 4276

## Conference



## Related item



## Funding

- funder_name: Indian Institute of Technology Hyderabad
- funder_name: Ministry of Education, India
- funder_name: NIMS Joint Center for materials Science
- funder_name: JICA Friendship 2.0

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## Fileset

- id: 1fc90cea-0fa6-4180-8cad-92ff262cc9f0
  filename: BiSb draft 2024-0514.pdf
  content_type: application/pdf
  size: 1242606
  md5: 148ebece772738504fb63ec3109ad062

## Thumbnail

fileset_id: 1fc90cea-0fa6-4180-8cad-92ff262cc9f0
filename: BiSb draft 2024-0514.pdf