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Topological insulators are intriguing materials in the field of spintronics because they exhibit unique electronic properties that hold great promise for device applications. BiSb has attracted more research interest among topological materials due to its remarkably high spin-orbit torque (SOT) efficiency. However, due to the low melting point of the alloy, high diffusivities of Bi/Sb tend to degrade the SOT efficiency with temperature and aging. In this work, we utilize interfacial chemistry driven by a titanium (Ti) spacer between BiSb/NiFe bilayers to improve the SOT efficiency. We investigated the effect of the Ti insertion layer on the SOT efficiency in as-deposited, room-temperature aging, and annealing conditions. The SOT efficiency, estimated from the spin-torque ferromagnetic resonance response, revealed that the samples with the Ti layer had shown a multi-fold increase in the SOT efficiency compared to those without Ti insertion. Atomic resolution microstructural analyses provided a clear understanding of the interfacial chemistry where the Ti successfully hindered the interdiffusion of Ni and Sb. The interfacial chemistry in the vicinity of Ti contributed significantly to the improvement of the SOT efficiency. These results highlight the importance of the Ti insertion layer in the BiSb-based topological material/ferromagnet bilayer systems for SOT applications in spintronics.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.4c00357

キーワード: topological insulator , BiSb, spin−orbit torque efficiency , Ti insertion , interface chemistry

刊行年月日: 2024-06-25

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Electronic Materials (ISSN: 26376113) vol. 6 issue. 6 p. 4269-4276

研究助成金:

• Indian Institute of Technology Hyderabad
• Ministry of Education, India
• NIMS Joint Center for materials Science
• JICA Friendship 2.0

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4573

公開URL: https://doi.org/10.1021/acsaelm.4c00357

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更新時刻: 2025-05-28 08:30:08 +0900

MDRでの公開時刻: 2025-05-28 08:19:38 +0900