# Enhancing the contact performance of transition metal dichalcogenide-based field effect transistors using UV-induced doping

https://mdr.nims.go.jp/datasets/2ba6fcb1-7540-4a7d-b3c0-2f38990d030f

## File

- [046119_1_5.0292130.pdf](https://mdr.nims.go.jp/filesets/12d6274f-148a-42bc-8ea4-fc2bd47dc8e6/download) ([Detail](https://mdr.nims.go.jp/filesets/12d6274f-148a-42bc-8ea4-fc2bd47dc8e6.md))

## Id

2ba6fcb1-7540-4a7d-b3c0-2f38990d030f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-15T02:39:33.746441Z

## Updated at

2026-02-17T03:30:24.747240Z

## Published at

2026-02-17T00:11:00.738248Z

## Doi



## First published url

https://doi.org/10.1063/5.0292130

## Date published

2025-12-01

## Recorded date published

2025-12-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Enhancing the contact performance of transition metal dichalcogenide-based
    field effect transistors using UV-induced doping
  title_type: original
  lang: en

## Description

- description: A persistent challenge in transition metal dichalcogenide (TMD)-based
    transistors is the formation of a Schottky Barrier (SB) at the metal–TMD interface
    which introduces substantial contact resistance and degrades device performance.
    Minimizing the barrier height and hence contact resistance—ideally to near-zero—is
    essential for realizing high-performance 2D material-based field-effect transistors.
    Here, we present a non-invasive photo doping strategy that leverages ultraviolet
    irradiation to induce localized n-type doping near the contact region, in hBN/TMD
    field-effect transistors. This targeted doping with UV exposure significantly
    reduces the SB, leading to a remarkable improvement in device performance. We
    demonstrate this with hBN/MoS2 transistors, where we achieve a barrier height
    reduction of∼100 meV, resulting in a seventy-fold increase in on-state cur- rent
    and a twenty-fold increase in mobility. We further demonstrate the generality
    of this approach by applying it to other TMD transistors, such as hBN/MoSe2 and
    hBN/WSe2 hybrids all of which exhibit similar performance enhancements. These
    results outline a portable, broadly applicable and scalable contact engineering
    strategy for next-generation 2D electronic devices.
  description_type: abstract
  lang: und

## Creator

- name: Somaditya Santra
  role: author
- name: Sankalp Samdariya
  role: author
- name: Shaili Sett
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Arindam Ghosh
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: 'transition metal dichalcogenide (TMD)
    '
  schema: not_defined
- subject: 'contact resistance
    '
  schema: not_defined
- subject: UV-induced doping
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/
  date_licensed: 2025-11-17

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: APL Electronic Devices
  volume: '1'
  issue: '4'
  article_number: '046119'

## Conference



## Related item



## Funding

- identifier: SP/DSTO-18-2038)
  funder_name: Department of Science and Technology, Ministry of Science and Technology,
    India
- identifier: DST/NM/TUE/QM-10/2019
  funder_name: Science and Engineering Research Board
- identifier: IE-REAC-23-0168
  funder_name: University Grants Commission
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMJCR24A5)
  funder_name: Core Research for Evolutional Science and Technology

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## Fileset

- id: 12d6274f-148a-42bc-8ea4-fc2bd47dc8e6
  filename: '046119_1_5.0292130.pdf'
  content_type: application/pdf
  size: 7702003
  md5: 59da0d6e46fa5f17e19ba3962e40133b

## Thumbnail

fileset_id: 12d6274f-148a-42bc-8ea4-fc2bd47dc8e6
filename: '046119_1_5.0292130.pdf'