# Ultrathin CoPt alloy films with fcc (111) orientation and perpendicular magnetic anisotropy fabricated by electrodeposition

https://mdr.nims.go.jp/datasets/2b470ecf-7ea1-4901-b81e-cfd6db9e7fa8

## File

- [ver.3_Manuscript_revised_Araki_Electrochem_Commun.docx](https://mdr.nims.go.jp/filesets/10e49c04-30f8-466d-9e37-a6b2a138e275/download) ([Detail](https://mdr.nims.go.jp/filesets/10e49c04-30f8-466d-9e37-a6b2a138e275.md))

## Id

2b470ecf-7ea1-4901-b81e-cfd6db9e7fa8

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-07-08T23:22:15.426167Z

## Updated at

2025-07-09T03:30:20.985102Z

## Published at

2025-07-09T03:17:16.062474Z

## Doi

https://doi.org/10.48505/nims.5566

## First published url

https://doi.org/10.1016/j.elecom.2025.107938

## Date published

2025-04-17

## Recorded date published

2025-7

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Ultrathin CoPt alloy films with fcc (111) orientation and perpendicular magnetic
    anisotropy fabricated by electrodeposition
  title_type: original
  lang: en

## Description

- description: In this study, ultrathin CoPt alloy films oriented along face-centered
    cubic (fcc) (111) with perpendicular magnetic anisotropy (PMA) are fabricated
    by electrodeposition at room temperature and normal pressure without annealing.
    By increasing the concentration of Pt ions in the electrolytes, initial nucleation
    of CoPt becomes fine, forming epitaxial CoPt alloy films oriented along fcc (111)
    to the film planes with very smooth surfaces (Arithmetic average roughness Ra~0.43
    nm). The deposited CoPt films show the lower saturation magnetization (MS~620
    emu･cm-3) compared to conventional CoPt films with hexagonal close-packed (hcp)
    structures. The CoPt film with a thickness of 5 nm exhibits large PMA (anisotropy
    constant Ku~4.3 Merg･cm-3), coercivity (HC~2.4 kOe), and nucleation field (Hn~2.0
    kOe). The fabricated CoPt films contribute to the development of magnetic tunnel
    junctions with enhanced tunnel magnetoresistance effects and a next-generation
    magnetic memory with ultrahigh recording density.
  description_type: abstract
  lang: und

## Creator

- name: Daiki Araki
  role: author
- name: Yoshiaki Sonobe
  role: author
- name: Yukiko K. Takahashi
  role: author
  orcid: https://orcid.org/0000-0001-9197-7236
- name: Takayuki Homma
  role: author

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: electrodeposition
  schema: not_defined
- subject: CoPt
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Electrochemistry Communications
  issn: '13882481'
  volume: '176'
  article_number: '107938'

## Conference



## Related item



## Funding

- identifier: G1026
  funder_name: Core Research for Evolutional Science and Technology
- identifier: JPMXS0440500024
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- funder_name: National Institute for Materials Science
- identifier: JPMJCR21C1
  funder_name: Core Research for Evolutional Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 10e49c04-30f8-466d-9e37-a6b2a138e275
  filename: ver.3_Manuscript_revised_Araki_Electrochem_Commun.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 1948608
  md5: 4deae7a22efed4d9efad1918effd0593

## Thumbnail

fileset_id: 10e49c04-30f8-466d-9e37-a6b2a138e275
filename: ver.3_Manuscript_revised_Araki_Electrochem_Commun.docx