# Ion Migration in Monolayer <math display="inline">  <msub>    <mrow>      <mi>Mo</mi>      <mi>S</mi>    </mrow>    <mn>2</mn>  </msub></math> Memristors

https://mdr.nims.go.jp/datasets/2ad1d60f-e8d4-4519-8f0a-05d99b11bade

## File

- [PhysRevApplied.18.014018.pdf](https://mdr.nims.go.jp/filesets/1c86b6ff-941e-486a-ba2e-80fa3ece6dc1/download) ([Detail](https://mdr.nims.go.jp/filesets/1c86b6ff-941e-486a-ba2e-80fa3ece6dc1.md))

## Id

2ad1d60f-e8d4-4519-8f0a-05d99b11bade

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-28T07:27:17.419239Z

## Updated at

2025-03-01T03:30:23.624091Z

## Published at

2025-03-01T03:30:23.716937Z

## Doi



## First published url

https://doi.org/10.1103/physrevapplied.18.014018

## Date published

2022-07-08

## Recorded date published

2022-7

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: "Ion Migration in Monolayer \n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"
    display=\"inline\" overflow=\"scroll\"><mml:msub><mml:mrow><mml:mi>Mo</mml:mi><mml:mi
    mathvariant=\"normal\">S</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>\n
    Memristors"
  title_type: original
  lang: en

## Description

- description: Memristors hold great promise as building blocks of novel computing
    architectures where memory and logic are combined at hardware level. Scaling down
    the dimensions of memristive devices has been limited from high leakage currents
    and thus prohibits further progress. Recent studies have shown the potential of
    using transition metal dichalcogenides (TMDs) to reduce leakage currents. However,
    the understanding of the switching mechanisms, in particular the role of metal
    ion diffusion on vacancy sites and the crystal defects remains elusive. To shed
    light on that, we report our findings in the performance of monolayer MoS2 memristors
    for different defect densities. We experimentally demonstrate that defect generation
    in the MoS2 can enhance the memristive effect by increasing the resistive switching
    ratio. Finally, we utilize quantum transport simulations and demonstrate the existence
    of an optimum range of defect densities. Our results reveal the importance of
    defect engineering and control in TMD memristive devices towards efficient hardware.
  description_type: abstract
  lang: und

## Creator

- name: Sotirios Papadopoulos
  role: author
- name: Tarun Agarwal
  role: author
- name: Achint Jain
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Mathieu Luisier
  role: author
- name: Alexandros Emboras
  role: author
- name: Lukas Novotny
  role: author

## Contact agent



## Publisher

organization: American Physical Society (APS)

## Managing organization



## Keyword

- subject: Memristors
  schema: not_defined
- subject: MoS2
  schema: not_defined
- subject: defect densities
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Physical Review Applied
  issn: '23317019'
  volume: '18'
  issue: '1'
  article_number: '014018'

## Conference



## Related item



## Funding

- identifier: JP15K21722
  funder_name: JSPS

## Instrument



## Instrument operator



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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: 1c86b6ff-941e-486a-ba2e-80fa3ece6dc1
  filename: PhysRevApplied.18.014018.pdf
  content_type: application/pdf
  size: 1796773
  md5: 5246824766a2cc6023406d73789c3e45

## Thumbnail

fileset_id: 1c86b6ff-941e-486a-ba2e-80fa3ece6dc1
filename: PhysRevApplied.18.014018.pdf