# Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors

https://mdr.nims.go.jp/datasets/2a7e14ff-1420-4969-94ba-272cba59ffbd

## File

- [manuscript.pdf](https://mdr.nims.go.jp/filesets/3df5fd7a-8180-4ba1-98b4-767e0893485e/download) ([Detail](https://mdr.nims.go.jp/filesets/3df5fd7a-8180-4ba1-98b4-767e0893485e.md))

## Id

2a7e14ff-1420-4969-94ba-272cba59ffbd

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-02-14T08:54:27.097586Z

## Updated at

2024-11-15T23:30:13.385073Z

## Published at

2024-11-15T23:30:14.806686Z

## Doi

https://doi.org/10.48505/nims.4962

## First published url

https://doi.org/10.1063/5.0194424

## Date published

2024-02-12

## Recorded date published

2024-2-12

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Electrical property improvement for boron-doped diamond metal–oxide–semiconductor
    field-effect transistors
  title_type: original
  lang: en

## Description

- description: High-performance boron-doped diamond (B-diamond) metal-oxide-semiconductor
    field-effect transistors (MOSFETs) are fabricated. Drain current maximum values
    for the B-diamond MOSFETs working at room temperature (RT) and 300 °C are −1.2
    and −10.9 mA/mm, respectively. Both of them show on/off ratios higher than 109
    and their extrinsic transconductance maximum values are 29.0 and 215.7 μS/mm,
    respectively. These properties are better than those of the previous reported
    values for the B-diamond MOSFETs. This study is meaningful to push forward the
    development of diamond-based MOSFETs for high-temperature applications.
  description_type: abstract
  lang: und

## Creator

- name: J. W. Liu
  role: author
  orcid: https://orcid.org/0000-0003-2580-7401
  organization: National Institute for Materials Science
- name: T. Teraji
  role: author
  orcid: https://orcid.org/0000-0002-7731-0547
  organization: National Institute for Materials Science
- name: B. Da
  role: author
  orcid: https://orcid.org/0000-0002-0785-8662
  organization: National Institute for Materials Science
- name: Y. Koide
  role: author
  orcid: https://orcid.org/0000-0001-8321-9822
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: Boron-doped diamond
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in J. W. Liu, T. Teraji, B. Da, Y. Koide; Electrical property improvement for
    boron-doped diamond metal–oxide–semiconductor field-effect transistors. Appl.
    Phys. Lett. 12 February 2024; 124 (7): 072103 and may be found at https://doi.org/10.1063/5.0194424.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '124'
  issue: '7'
  article_number: '072103'

## Conference



## Related item



## Funding

- identifier: JP23K03966
  funder_name: Japan Society for the Promotion of Science
- identifier: 20H05661
  funder_name: Japan Society for the Promotion of Science
- identifier: and JP20H00313
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMXS0118068379
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMJCR1773
  funder_name: Core Research for Evolutional Science and Technology
- identifier: JPMJMS2062
  funder_name: Core Research for Evolutional Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: 3df5fd7a-8180-4ba1-98b4-767e0893485e
  filename: manuscript.pdf
  content_type: application/pdf
  size: 887020
  md5: 3ff3617149c96c97e1a0a8cb1dbc23eb

## Thumbnail

fileset_id: 3df5fd7a-8180-4ba1-98b4-767e0893485e
filename: manuscript.pdf