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Altermagnetism presents intriguing possibilities for spintronic devices due to its unique combination of strong spin-splitting and zero net magnetization. However, realizing its full potential hinges on fabricating single-variant altermagnetic thin films. In this work, we present definitive evidence for the formation of single-variant altermagnetic RuO2(101) thin films with fully epitaxial growth on Al2O3(1"1" ̅02) r-plane substrates, confirmed through rigorous structural analyses using X-ray diffraction, atomic-resolution transmission electron microscopy and X-ray magnetic linear dichroism (XMLD). The mutual correspondence of the occupancy of oxygen atoms on the surfaces of RuO2(101)[010] and Al2O3(1"1" ̅02)[11"2" ̅0] plays a decisive role in the formation of the single-variant RuO2, which is also supported by our first-principles density functional theory calculations. We further observed spin-splitting magnetoresistance in the single-variant RuO2(101)/CoFeB bilayers, highlighting the characteristic effect of single variant on spin transport. The demonstration of single-variant RuO2(101) films marks a significant advancement in the field of alternating magnetism and paves the way for exploring their potential applications.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: Altermagnet, RuO2, XMLD, Spin splitting magnetoresistance, Single variant

刊行年月日: 2025-09-24

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 16 issue. 1 8235

研究助成金:

• MEXT | Japan Society for the Promotion of Science 20H00299
• MEXT | Japan Society for the Promotion of Science 21H01750
• MEXT | Japan Society for the Promotion of Science 24H00408
• MEXT | Japan Society for the Promotion of Science 22H04966

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-025-63344-y

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更新時刻: 2025-09-26 12:30:17 +0900

MDRでの公開時刻: 2025-09-26 12:19:02 +0900