# Defect engineering-induced Seebeck coefficient and carrier concentration decoupling in CuI by noble gas ion implantation

https://mdr.nims.go.jp/datasets/29535d0d-158d-43c6-a647-59ce95e74b6f

## File

- [MDI--CuI_NG_manuscript.pdf](https://mdr.nims.go.jp/filesets/daf858c3-0691-4224-a5bc-a42964dc03f1/download) ([Detail](https://mdr.nims.go.jp/filesets/daf858c3-0691-4224-a5bc-a42964dc03f1.md))

## Id

29535d0d-158d-43c6-a647-59ce95e74b6f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-11-23T06:02:32.759939Z

## Updated at

2024-11-25T07:30:11.738557Z

## Published at

2024-11-25T07:30:12.920952Z

## Doi

https://doi.org/10.48505/nims.5021

## First published url

https://doi.org/10.1063/5.0233754

## Date published

2024-11-18

## Recorded date published

2024-11-18

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Defect engineering-induced Seebeck coefficient and carrier concentration
    decoupling in CuI by noble gas ion implantation
  title_type: original
  lang: en

## Description

- description: "Copper(I) iodide, CuI, is the leading p-type non-toxic and earth-abundant
    semiconducting material for transparent electronics and thermoelectric generators.
    The power factor of thin film CuI was increased from 332pm32 μWm-1K-2 to 578pm58
    μWm-1K-2 after implantation with noble gas ions (Ne, Ar, Xe). The increased power
    factor is due to a decoupling of the Seebeck coeffcient and carrier concentration
    identified through a changing scattering mechanism. Ion implantation causes the
    abundant production of Frenkel pairs, which were found to to suppress compensating
    donors in CuI, studied using density functional theory calculations.\r\nThe compensating
    donor suppression led to a significantly improved Hall carrier concentration,
    increasing from 6:5 x 1019 pm 0:1 x 1019 cm-3 to 11:5 x 1019 pm 0:4 x 1019 cm-3.
    This work provides an important step forward in the development of CuI as a transparent
    conducting material for electronics and thermoelectric generators by introducing
    beneficial point defects with ion implantation."
  description_type: abstract
  lang: und

## Creator

- name: Martin Markwitz
  role: author
  orcid: https://orcid.org/0009-0007-6516-3571
- name: Peter P. Murmu
  role: author
  orcid: https://orcid.org/0000-0002-0109-1798
- name: Takao Mori
  role: author
  orcid: https://orcid.org/0000-0003-2682-1846
- name: John V. Kennedy
  role: author
  orcid: https://orcid.org/0000-0002-9126-4997
- name: Ben J. Ruck
  role: author
  orcid: https://orcid.org/0000-0002-3719-7375

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: thermoelectric
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Martin Markwitz, Peter P. Murmu, Takao Mori, John V. Kennedy, Ben J. Ruck;
    Defect engineering-induced Seebeck coefficient and carrier concentration decoupling
    in CuI by noble gas ion implantation. Appl. Phys. Lett. 18 November 2024; 125
    (21): 213901 and may be found at https://doi.org/10.1063/5.0233754.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '125'
  issue: '21'

## Conference



## Related item



## Funding

- identifier: MFP-GNS2301
  funder_name: Marsden Fund
- identifier: JPMJMI19A1
  funder_name: JST-Mirai Program

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: daf858c3-0691-4224-a5bc-a42964dc03f1
  filename: MDI--CuI_NG_manuscript.pdf
  content_type: application/pdf
  size: 4575756
  md5: 9fc0cf09b9748a83fea4ac306d5ab303

## Thumbnail

fileset_id: daf858c3-0691-4224-a5bc-a42964dc03f1
filename: MDI--CuI_NG_manuscript.pdf