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Highly sensitive, selective, and energy-efficient gas sensors are essential for real-time environmental monitoring and air quality assessment. In this work, we present an optically programmable gas sensor based on WSe₂/hBN heterostructure transistors for NOₓ detection. To understand the sensing mechanism, in situ Kelvin probe force microscopy (KPFM) was used, revealing that NOₓ adsorption at the metal/semiconductor interface modulates the Schottky barrier height (SBH), which governs charge transport and gas sensitivity. Furthermore, we demonstrate that UV-induced charge modulation allows dynamic control of sensor response, offering a tunable and reversible method for optimizing gas detection. This study highlights the potential of heterostructure engineering and optoelectronic modulation in developing next- generation, low-power smart gas sensors for environmental monitoring applications.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: gas sensor, WSe2/hBN Heterostructure, Optically Programmable

刊行年月日: 2025-09-10

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Materials & Interfaces (ISSN: 19448252) vol. 17 issue. 36 p. 50977-50985

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology
• Norges Forskningsr?d 197405
• Norges Forskningsr?d 280788
• Norges Forskningsr?d 295864
• Silesian University of Technology 02/130/SDU/10-17-01
• Japan Society for the Promotion of Science 20h00354
• Japan Society for the Promotion of Science 21h05233
• Japan Society for the Promotion of Science 23h02052
• National Institute for Materials Science

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acsami.5c09390

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更新時刻: 2026-05-11 10:21:11 +0900

MDRでの公開時刻: 2026-05-11 16:25:05 +0900